MemVerge and SK hynix, two specialist innovators in Big Memory solutions, have launched Project Endless Memory, a co-engineered system that addresses the challenge of memory exhaustion in data-intensive applications.

SK hynix has announced the launch of its DDR5 DRAM, a high-speed and high-density product optimised for big data, Artificial Intelligence (AI), and machine learning (ML) as a next generation standard of DRAM.

SK Hynix announced that it has developed the world’s first 8Gb LPDDR3 using its advanced 20nm class process technology. This product is a top-performance mobile memory solution which features high density, ultrahigh speed and low power consumption.

SK Hynix today announced financial results for its fourth quarter and fiscal year 2012 ended December 31, 2012. The Company posted the consolidated fourth quarter revenue of 2.72 trillion won increased 12% from 2.42 trillion won of the previous quarter due to strong seasonal demand.

SK Hynix announced that it has developed the industry’s first 20nm class 4Gb graphics DDR3 DRAM which provides power efficiency and fast speed performance. As an eco-friendly product, it is well suited for the low power laptop since it operates at a low-voltage while it offers graphics performance as the desktop level.

SK Hynix announced its launch of client Solid State Drive. The SSD features faster speed and low power consumption than Hard Disk Drive so it is expected to replace the HDD as another type of storage for PCs and other applications.

Hynix Semiconductor and Toshiba Corporation today announced that they have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device. Once technology development is successfully completed, the companies intend to cooperate in manufacturing MRAM products in a production joint venture. Hynix and Toshiba have also extended their pate...

Hynix Semiconductor Inc. (‘Hynix’, www.hynix.com) today announced that it has developed 2Gb(Gigabit) DDR4 DRAM and DDR4 DRAM based 2GB(Gigabyte) ECC-SODIMM(Error Check & Correction Small Outline Dual In-line Memory Module) applying its leading 30nm class process technology. The DDR4 DRAM product meets the JEDEC standard and the module product is designed for the micro server.

Hynix Semiconductor today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product. The two companies will jointly develop new materials and process integration to deliver ReRAM to market by transferring the innovative memristor technology from research to commercial development. Hynix will implement the technology in its R&...