ROHM has completed the acquisition of Powervation, a developer of digital power management SoC solutions, for approximately $70m in an all-cash transaction. Combining Powervation’s Intelligent Digital Power platform with ROHM’s leading analogue power technology and global market access will enable a range of fast growing market opportunities, as customers increasingly adopt digital power solutions to power next-gen high density system...

  ROHM has recently announced the development of an AC/DC converter control IC designed specifically for SiC MOSFET drive in industrial equipment such as servers and other large power applications.

ROHM has announced the development and mass production of a SiC MOSFET that adopts the world's first trench structure. Compared to existing planar-type SiC MOSFETs, RDS(ON) is reduced by 50% in the same chip size, making it possible to significantly decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems.

  Claimed to be the world’s first trench-type SiC MOSFET, Rohm has announced mass production of an SiC MOSFET that reduces on resistance by 50%, compared to planar SiC MOSFETs, says the company.

Energy-savings has become essential in equipment’s design. Therefore, high efficiency of inverter and converter circuits used in power electronics, especially for power supply and motor drives requiring high-power conversion, has become indispensable. By Raimund Wagner, Rohm Semiconductor.

  ROHM has announced the development of a high efficiency power management IC optimised for Freescale Semiconductor’s i.MX 6SoloLite applications processor.

ROHM will present its latest power product designs at PCIM, Nuremberg, from 19th to 21st May (Hall 9, Booth 316). Demand for high performance, power, reliability, cost and energy efficiency, as well as miniaturisation, puts stress on power device design. ROHM’s novelties offer beneficial characteristics and compact packaging solutions, based on the company’s R&D activities and micro fabrication technologies.

 Fukushima SiC Applied Engineering has selected ROHM’s SCT2080KE SiC MOSFET for use in its SiC-Pulser series of high voltage pulse generators. Pulse generators are used in a variety of applications, including high voltage accelerators, plasma generators and laser processing machines. Conventional systems utilise silicon devices or vacuum tubes as switching elements. However, this often entails a large number of system components w...

ROHM has announced the BM1383GLV family of piezoresistive pressure sensors which feature pressure accuracy and stable measurement at both low and high temperatures due to a built-in temperature correction function. Built with ROHMs MEMS technology, the piezoresistive sensing element outputs a signal which is proportional with the atmospheric pressure.

A colour sensor, designed for display-equipped devices capable of detecting the colour temperature, brightness and RGB components of ambient light, has been released by ROHM. By leveraging original infrared removal technology and computing methods, the BH1745NUC reduces the effects of infrared rays by more than ten times compared with conventional devices. This enables compatibility with dark (low permeability) optical windows.

Contributing to increased miniaturisation, greater stability and longer life for EDLCs, the BD14000EFV-C cell balancing IC has been released by ROHM. The device integrates over 20 discrete components required for EDLC cell balancing on a single chip, reducing mounting area by 38%. This also eliminates component variations, making it easy to configure EDLC systems. 

Designed for power-efficient motor driving and inverter applications, the Intelligent Power Module (IPM) series has been released by ROHM Semiconductor. The series consists of IGBT based modules optimised for low or high speed operation, and MOSFET based IPMs which integrate the company’s Low Ron SuperJunction MOSFET, PrestoMOS. 10,15 and 20A versions of 600V IGBTs/IPMs are currently available, and 30A versions under development.

ROHM has plans to build a new facility at ROHM Integrated Systems (Thailand) (RIST) to address the increasing demand for expanding the post processing production capability of LSIs. The project, which is currently in the design phase, is scheduled to begin in December 2014 and be completed by December 2015. 

Designed for MCUs in a variety of automotive systems, including EVs and HEVs, the BD39001EKV-C power supply has been released by ROHM. Ensuring stable voltage supply, even when the battery voltage drops after idling stop, the device utilises a proprietary boost-buck switching method.

  As the industry pushes forward to realise SiC’s full potential, Jochen Hüskens, Rohm Semiconductor, argues that the next generation of SiC power devices is well-positioned to enable new high-volume applications such as EVs and solid state transformers.

Achieving simple audio playback via connection to a speaker, LAPIS Semiconductor, a ROHM Group Company, has introduced a low power MCU. The ML610Q304 integrates an 8-bit low power MCU core, speech synthesis circuit, high efficiency Class-D speaker amplifier, non-volatile memory and oscillator circuit on a single chip.

To meet the demand for high-performing, compact power supply applications, ROHM has introduced the BD9G101G and BU9000xGWZ DC/DC converters. The BD9G101G converter provides a wide operating voltage range of 6-42V, with an extended operating temperature range of -40 to 105°C. In a SOT23 (SSOP6) package which measures only 2.9x2.8x1.25mm, the converter also allows designers to reduce space by more than 20%.&nb...

Low-ohmic chip resistors, optimised for current detection applications in compact equipment, have been developed by ROHM Semiconductor. The UCR006 series of ultra-compact (0.6x0.3mm) thick-film chip resistors is offered in resistances as low as 100mΩ, providing greater energy savings.

Based on innovative proprietary packaging and manufacturing technologies, ROHM have introduced a family of devices which they claim are the smallest electronic components in the industry. The RASMID (ROHM Advanced Smart Micro Device) families include ultra-compact chip resistors in 03015 (0.3 × 0.15mm) size as well as Schottky barrier diodes in 0402 (0.4 × 0.2mm) size. 

  ROHM Semiconductor as a leading provider of reliable SiC technology offers a full line up of high reliable, high efficient 2nd generation SiC Power Devices for use in fast switching, high temperature and high voltage devices.