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Richardson RFPD

  • 40W267 Keslinger Road P.O. Box 307 LaFox, Illinois
    60147-0307
    United States of America
  • (630) 208-2700
  • http://
  • (630) 208-2662

Richardson RFPD Articles

Displaying 121 - 140 of 206
Power
2nd April 2017
Gate driver device family range from 2.5A to 8A

The SCALE-iDriver family of integrated circuits from Power Integrations is available at Richardson RFPD along with full design support capabilities. The new ICs are galvanically-isolated single-channel gate driver devices that range in output current from 2.5A to 8A, the industry’s highest output current without an external booster.

Power
30th March 2017
IGBTs boast SoLid Cover) technology in low-profile package

A family of power IGBTs in the new VINco E3 package from Vincotech are available at Richardson RFPD with full design support capabilities. The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard low-profile package. It enables engineers to design mid-power inverters with higher output current, higher power density and improved reliability for motion control, industrial drives, solar power, UPS and other mid-power applic...

IoT
24th March 2017
Embedded cellular module provides device to cloud architecture

An embedded cellular module from Sierra Wireless is available at Richardson RFPD with full design support capabilities. The WP8548 is part of Sierra Wireless’ AirPrime WP Series, which provides an integrated device-to-cloud architecture enabling IoT developers to build a Linux-based product on a single module and seamlessly send valuable user and product data to the cloud.

Events News
8th March 2017
Power solutions head for APEC 2017 in Tampa

At APEC 2017 in Tampa, Florida (March 27-29), Richardson RFPD will highlight a wide range of innovative technologies from the world's leading suppliers of applied power electronics solutions. Featured on the company stand will be ADI drivers for wide bandgap technologies, featuring low propagation delay and cost/size reductions versus opto-coupler solutions, and Astrodyne EMI filters (single-phase, 3-phase, DC, COTs and custom designs) for virtua...

Power
22nd February 2017
SiC MOSFET driver reference design optimised for desaturation protection

A new SiC MOSFET driver reference design from Microsemi is available at Richardson RFPD supported by full design support capabilities. The MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating silicon carbide MOSFETs in a number of different topologies, as well as a means to assess device performance for parametric test purposes.

Communications
15th February 2017
Multiband antenna slash design cycle times

Availability and full design support capabilities have been announced by distributor Richardson RFPD for the latest mXTEND SMT multiband antenna from Fractus. The Fractus mXTEND antenna boosters leverage Fractus’ Virtual Antenna technology to reduce design cycle times by replacing time-consuming, high-NRE custom antenna solutions with miniature, standard, off-the-shelf components.

Boards/Backplanes
10th February 2017
MOSFET-based evaluation board cuts design costs

A new evaluation board from Wolfspeed, a Cree Company is available at Richardson RFPD. The CRD-060DD17P-2 is a demonstration board for a single-end flyback converter design built with Wolfspeed’s commercially-available 1700V SiC MOSFET. The 48W experimental reference design demonstrates how the 1700V SiC MOSFET can reduce total cost and simplify the design of auxiliary power supply.

Frequency
23rd January 2017
Tuneable bandpass filter operates off 3.3V supply

A new 30–88MHz tunable bandpass filter and associated evaluation board from NewEdge Signal Solutions is available at Richardson RFPD with full design support. The SAX248 is designed for tactical communications applications and operates from a single 3.3 V supply.

Power
16th January 2017
50V GaN RF transistors operate from DC to 4GHz

Availability and full design support capabilities for two new GaN on SiC RF transistors from Qorvo have been announced by Richardson RFPD.  The new discrete GaN on SiC HEMTs operate from DC to 4GHz. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2GHz, and a linear gain of 24dB at 2GHz.

Frequency
16th December 2016
Power amplifier targets satcomms applications

A new X-band GaN power amplifier from Qorvo has arrived at distributor Richardson RFPD who will also offer full design support capabilities. The TGM2635-CP operates from 7.9 to 11GHz and provides 100W of saturated output power with 22.5dB of large signal gain and greater than 35% power-added efficiency.

Analysis
12th December 2016
Up-converter, down converter options on MMIC fundamental mixers

Availability and full design support capabilities have been announced by Richardson RFPD for two GaAs MMIC fundamental mixers from Analog Devices. The HMC557A is a general-purpose, double balanced mixer in a 24-lead, ceramic 4 mm x 4 mm LCC package that can be used as an up-converter or down-converter from 2.5GHz to 7GHz and requires no external components or matching circuitry.

Frequency
30th November 2016
High-power SMT attenuators cover DC-20GHz

A new series of high-power SMT attenuators from American Technical Ceramics (ATC) is available at distributor Richardson RFPD. The AT0603 Series provides virtually flat loss over a broad frequency spectrum and is ideal where low noise, low inductance and low parasitic capacitance is required.

Boards/Backplanes
22nd November 2016
Boards evaluate GaN E-HEMT performance

Availability and full design support capabilities for a family of evaluation boards from GaN Systems have been announced by Richardson RFPD. The GS665XXX-EVBDB daughterboard evaluation kits consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.

Frequency
28th October 2016
Dual RF transceiver has tuning range of 300MHz to 6GHz

A new integrated, dual RF transceiver from Analog Devices (ADI) is available with design support from Richardson RFPD. ADI's AD9371 is a highly-integrated, wideband RF transceiver offering dual channel transmitters and receivers, integrated synthesisers, and digital signal-processing functions.

Passives
20th October 2016
Bi-directional coupler delivered in surface mount package

A new bi-directional surface-mount coupler from Innovative Power Products is in stock at Richardson RFPD along with full design support. The IPP-8036 is one of the featured surface-mount products from IPP’s full line of dual directional couplers. It is a 300W, 50dB dual directional coupler that operates from 20MHz to 1000MHz.

Power
2nd October 2016
UltrasCMOS FET driver enables next-generation applications

Richardson RFPD is now offering availability and full design support capabilities for a new UltraCMOS FET driver from Peregrine Semiconductor. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride FETs.

Frequency
30th September 2016
GaN on SiC HEMTs designed for defence applications

Availability and full design support capabilities are now being offered by Richardson RFPD for four new GaN on SiC high-electron-mobility transistors from Qorvo. The QPD1000 is a 15 W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30MHz to 1.215GHz.

Power
24th August 2016
RF power transistor operates at up to 500MHz

Availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors have been announced by distributor Richardson RFPD.  The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500W CW at 50V, along with superior ruggedness and thermal performance

Power
18th August 2016
MOSFET enables smaller power conversion systems

Availability and full design support capabilities for a new silicon carbide power MOSFET from Wolfspeed, has been announced by Richardson RFPD.  According to Wolfspeed, the C20045170 is claimed to be the industry’s first 1700 V, 45 mΩ SiC MOSFET. It offers high-speed switching with low capacitances, avalanche ruggedness, fast intrinsic diode with low reverse recovery (Qrr), and it is easy to parallel and simple to drive.

Frequency
3rd August 2016
Dual-pin diodes feature on passive switch

A new passive switch from MACOM Technology Solutions is available from distributor Richardson RFPD with full design support capabilities.  The MADP-011048 uses silicon PIN diodes in a non-magnetic surface mount package. There are two sets of diode pairs, constructed in an electrically-isolated, anti-parallel configuration, that operate from 5MHz to 400MHz. 

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