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RF Micro Devices Inc

  • 7628 Thorndike Road Greensboro
    NC 27409-9421
    United States of America
  • +1 336.664.1233
  • http://www.rfmd.com

RF Micro Devices Inc Articles

Displaying 161 - 168 of 168
Power
23rd February 2010
RFMD® Introduces PowerSmart™ Power Platforms

RF Micro Devices, Inc today introduced PowerSmart power platforms, a new product category designed to reshape the future of multimode, multi-band cellular RF architectures. RFMD's PowerSmart platforms feature a revolutionary new RF Configurable Power Core, which leverages industry-leading functional efficiency and delivers state-of-the-art processing of all known cellular communications modulation schemes, including GSM/GPRS, EDGE, EDGE Evolution...

Power
23rd February 2010
RFMD Commences Volume Production of WCDMA/HSPA+ Power Amplifiers

RF Micro Devices, Inc. announces it has commenced high-volume production of its RF720x WCDMA/HSPA+ power amplifiers (PAs). RFMD's RF720x product family is comprised of seven high performance PAs designed for smartphones and 3G devices implementing mode-specific, band-specific front end architectures. The RF720x product family accommodates all major WCDMA/HSPA+ bands and band combinations and is optimized to mate with reference designs from Qualco...

Communications
9th February 2010
Broadband Power Amplifier for 4G base stations

Nujira and RF Micro Devices announced that they will be demonstrating an efficient broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona, February 2010. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators.

Analysis
30th November 2009
RFMD Receives First GaN Product Purchase Order from Tier-One Wireless Base Station Manufacturer

RF Micro Devices, Inc. today announced it has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order is for RFMD's RFG1M09180 180-watt GaN broadband power transistor (BPT) and is in support of the global expansion of 4G wireless networks.

Pending
30th November 2009
RFMD® Announces Major Gallium Nitride (GaN) Milestones

RF Micro Devices has announced that it has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF products are released by RFMD for mass production. Shipments of the RF3931 have commenced to multiple high power amplifier (HPA) manufacturers,...

Pending
30th November 2009
Ultra-Linear Push-Pull Amplifiers for Multiple CATV Infrastructure Applications

RF Micro Devices introduced a portfolio of push-pull amplifiers designed for multiple CATV infrastructure applications. The CGA/CGR product portfolio includes the CGA-1518Z and CGA-7718Z amplifiers for forward path, downstream applications and the CGR-0118Z and CGR-0218Z amplifiers for return path, upstream applications.

Communications
30th November 2009
RFMD Introduces RFFC0085 Frequency Converter IC

RF Micro Devices has announced the introduction of the RFFC0085 frequency converter IC. The CMOS-based RFFC0085 frequency converter IC is designed for use as an Out-of-Band (OOB) receive circuit tuner in cable industry and SATCOM-DBS set-top boxes, DOCSIS® Set-Top Gateways, OpenCable Application Platform (OCAP™) CableCards, Tru2Way™ products and CableCard-equipped HDTVs.

Analysis
30th November 2009
RFMD Releases Green GaN CATV Amplifier Module Portfolio

RF Micro Devices today released green gallium nitride (GaN) based CATV amplifier modules. The D10040200PL1 and D10040230PL1 are designed for use as power doubler amplifiers in current and next generation CATV infrastructure applications.

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