RF Micro Devices Inc
RF Micro Devices Inc Articles
Android smartphone incorporates RFMD ICs
The ET power amplifiers, antenna switch module, diversity switches and antenna tuner from RFMD have been incorporated into the latest Android smartphone from a Korea-based manufacturer. The 5th generation smartphone claims to be the slimmest and fastest Android phone to date and the first new smartphone to benefit from the improved power efficiency of RFMD's ET PAs and antenna control solutions.
RFMD Announces 500 Watt GaN L-Band Amplifier
RF Micro Devices introduce the RFHA1027 gallium nitride matched power transistor delivering industry-leading pulse power performance of 500W in a compact flanged package at L-Band. RFMD's new amplifier is optimized for pulsed power applications requiring efficiency and compact size. It operates from 1.2 GHz to 1.4 GHz and provides 500W of pulsed RF power from a 50 Volt supply.
RFMD Announce Best-in-Class Microwave Voltage-Controlled Attenuator
RF Micro Devices introduce a broadband, microwave voltage-controlled attenuator, the RFSA2113. The RFSA2113 provides a complete monolithic solution in a small 3mm x 3mm QFN package and operates over a frequency range of 50MHz to 18GHz. The RFSA2113 also incorporates a new circuit architecture that offers high IP3, high attenuation range, low DC current, broad bandwidth and a temperature compensated linear-in-dB control voltage characteristic.
RF Micro Devices Appoints Industry Leader James A. Clifford as Vice President, Foundry Services
RF Micro Devices today announced the appointment of James A. Clifford as Vice President, Foundry Services, effective April 1, 2013. Mr. Clifford is a recognized industry leader with wide-ranging experience in technology, procurement, supply chain, operations, quality, and program management.
RFMD Announce Flexible Gallium Arsenide Sourcing Strategy
RF Micro Devices have today announced a new Gallium Arsenide sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth. RFMD will phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in Greensboro, NC.
RFMD Selected To Support Fourth-Generation Flagship Smartphone
RF Micro Devices has been selected by a leading smartphone manufacturer to supply multiple 3G/4G LTE components into a recently announced fourth-generation flagship smartphone platform. The highly anticipated smartphones will feature RFMD's recently announced RF7388 multimode multi-band 3G/4G PA, multiple variants of RFMD's RF73xx family of ultra-high efficiency LTE PAs, and RFMD's industry-leading antenna control solutions.
RF Micro Devices Expands RF Power Management Leadership
RF Micro Devices announce the addition of multiple new products to RFMD's industry-leading portfolio of envelope tracking power management and power amplifier solutions. RFMD's ET-based solutions leverage the Company's leadership in RF power management and cellular PAs to improve system-level efficiency in high-data rate applications.
RFMD Power Amplification Solution Based On Broadcom 5G Wifi Technology
RF Micro Devices reveal that it is shipping production volumes of its power amplification solutions that are compatible with Broadcom's 5G WiFi chips. RFMD developed the RFFM82x5 (2.4GHz) and RFFM85x5 (5GHz) FEMs with Broadcom's 5G WiFi chips, which are based on the IEEE 802.11ac standard. The combined solution delivers faster throughput and expanded range for an enhanced user experience.
Multimode Multi-Band Power Amplifiers Portfolio Expanded By RFMD
RF Micro Devices announce the expansion of the Company's family of multimode multi-band power amplifiers to include the highly integrated RF7388 3G/4G MMMB PA. RFMD offers the industry's broadest portfolio of MMMB components, and RFMD's PowerSmart power amplifiers are at the forefront of the technology shift to multimode-based architectures for smartphones, tablets, and other data-centric mobile broadband devices.
RFMD Unveils Complete Suite Of Products To Enable Entry Smartphone Segment
RF Micro Devices announce the expansion of the Company's entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones. The new RF solutions are designed to solve the increasingly complex RF requirements of entry-level 2G and 3G smartphones related to cost, band count, and thermal dissipation.
RFMD Unveil Highly-Integrated FEM For Smart Energy/AMI At 2013 CES
RF Micro Devices announced today it will unveil a highly-integrated front end module for Smart Energy/Advanced Metering Infrastructure applications at the 2013 Consumer Electronics Show in Las Vegas. RFMD's single-chip RFFM6403 FEM delivers industry-leading performance, reduces customer design time and speeds customer time-to-market in Smart Energy/AMI applications operating in the 405MHz—475MHz frequency range, as well as for portable battery ...
RFMD Introduce New RFPA520x WiFi Power Amplifier Modules
RFMD’s new RFPA520x series of three-stage WiFi Power Amplifier modules are designed for 802.11b/g/n applications. Each is a high-performance, highly integrated solution with minimal external components, eliminating the need for any external matching components and greatly reducing layout area, bill of materials, and manufacturing costs for the customer application.
RFMD's Kevin Kobayashi Named 2013 IEEE Fellow
RF Micro Devices announce that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers by the IEEE Board of Directors. The IEEE grade of Fellow was conferred on Mr. Kobayashi in recognition for his extraordinary contributions to monolithic microwave integrated circuits. The IEEE is the world's largest professional association for the advancement of technology. Less than one-tenth of one perc...
RFMD Introduces 5GHz WiFi Module for 802.11ac Notebook and Mobile Equipment Applications
RF Micro Devices today introduced the highly-integrated RFFM4501E front end module for 802.11ac notebook and mobile equipment applications. RFMD's newest WiFi FEM meets or exceeds the system requirements for 802.11ac connectivity in the 5.150GHz — 5.850GHz frequency band and is optimized to support multiple applications, including notebooks, mobile routers, and low-power customer premises systems.
RFMD Introduce Absorptive High-Isolation SPDT Switch
The RFSW6124 is an SPDT RF switch featuring a symmetric design for exceptional isolation. Typical applications for this GaAs pHEMT switch include cellular base stations and other communications systems requiring high linearity and power-handling capability.
RFMD unveil new WiFi Front End Modules
RFMD’s new RFFM8xxx series provide complete integrated solutions in single front end modules for WiFi systems. The ultra-small form factor and integrated matching minimizes the layout area in the customer's application and greatly reduces the number of external components.
RFMD introduces the RFFM6903 front end module
RF Micro Devices today announced the availability of the RFFM6903 front end module. RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz–960MHz frequency band.
RFMD Releases Family of Linear GaN Power Transistors
RF Micro Devices today announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors—RFHA3942 (35W) and RFHA3944 (65W)—that deliver superior linear performance versus competing GaN transistors.
High-Power GaN HEMT Power Amplifiers
RFMD’s new RFHA104x series of high-power GaN broadband power transistors are optimized for military communications, commercial wireless infrastructure, and general purpose applications. Using an advanced 65V high power density GaN semiconductor process optimized for high peak-to-average ratio applications, these high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier d...
5MHz to 1000MHz, Push-Pull, High Linearity InGaP HBT Amplifier
RFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliablility. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.