Navitas Semiconductor specialises in GaN power ICs and was founded in 2014. GaN power ICs integrate GaN power with drive, control, protection and sensing to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new-energy markets.

Navistas has announced that its next-gen GaNFast power ICs with GaNSense technology have been selected to power vivo's folding-screen 'X-Fold' in-box 80W flash charger.

Navitas Semiconductor, the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) will highlight next-generation IC technologies and market advancement at Europe’s most prestigious power electronics conference, PCIM (Power, Control and Intelligent Motion) 2022 (May 10th – 12th, Nuremberg, Germany).

Navitas has announced a 20-year limited warranty for its GaNFast technology that is10x longer than typical silicon, SiC or discrete GaN power semiconductors and has a critical accelerator for GaN’s adoption in data center, solar and EV markets.

Zero reported GaN-related field failures sets unprecedented industry benchmark.

Navitas has announced that its GaNFast technology has been selected to deliver a fast charging solution for the realme GT Neo 3 smartphone series that saw its launch at MWC 2022 in Barcelona.

Navitas Semiconductor the industry leader in GaN power ICs, has announced a GaNFast Global Marketing Program with consumer electronics and accessory specialist UGREEN.

Navitas Semiconductor has released its first annual sustainability report. The Sustainability Report 2021 highlights how the company’s GaN technology supports global carbon ‘net-zero’ ambitions by reducing Navitas customers’ CO2 footprints and accelerating the evolution from fossil fuels to renewable energy sources and electricity-based applications.

Navitas Semiconductor has released its first annual sustainability report. The Sustainability Report 2021 highlights how the company’s GaN technology supports global carbon ‘net-zero’ ambitions by reducing Navitas customers’ CO2 footprints and accelerating the evolution from fossil fuels to renewable energy sources and electricity-based applications.

Navitas Semiconductor has announced that its participation in APEC 2022 (Houston, March 20th-24th) will highlight further technical and market leadership in mobile fast chargers plus expansion into higher-power markets including data center, solar and EV, plus show the critical sustainability contribution that GaN delivers, reducing our dependance on fossil fuels. APEC attendees will also have the chance to win leading-edge fast chargers in ...

Navitas have announced that its next-generation GaNFast power IC drives the 120W ultra-fast charger supplied ‘in-box’ with vivo’s iQOO-brand flagship iQOO 9 Pro mobile phone. The 9 Pro’s powerful 4,700 mAhr battery charges from 0-100% in only 19 lightning-fast minutes, and at only 60.5 x 52.5 x28.8 mm (92 cc), the charger is 26% smaller than the previous generation, reaching a stunning 1.3 W/cc power density.

Navitas Semiconductor announced that its GaNFast gallium nitride (GaN) ICs power OPPO’s new 50W ultra-thin and ultra-fast ‘League of Legions’ limited-edition fast charger. This ‘collectable’ version of OPPO’s ground-breaking ‘cookie’ charger has an extraordinary thin and light body and an innovative ‘lanyard’ charging cable.

Navitas Semiconductor has announced that high-power GaN power IC samples are now available to data center, solar and electric vehicle (EV) customers worldwide.

Navitas Semiconductor has announced the NV6128, a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics market, and take market share from the old, slow, silicon chip.

Navitas Semiconductor announces what it believes is the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC, with the introduction of the NV6250.

Navitas believes it has developed the world’s first GaN power IC, based on its proprietary AllGaN technology.

Believed to be the first GaN power ICs, Navitas introduces its ICs, based on its proprietary AllGaN monolithically-integrated 650V platform. They combine GaN power FETs with GaN logic and drive circuits, claimed to enable 10 to 100 times higher switching frequency than exisiting silicon circuits.