GaN Systems is stepping up its sales effort in Europe. It has signed a distribution agreement with Ecomal Europe to promote and distribute its gallium nitride (GaN) high power switching transistors. The partnership is seen as synergistic by both GaN Systems and Ecomal Europe, as many of GaN Systems’ prospective customers in the region already have a relationship with Ecomal Europe.

GaN Systems has announced an application note for design engineers which sets out thermal design guidelines and PCB layout choices for its enhancement mode power switching transistors, which are supplied in its proprietary GaNPX device packaging. These are the first discrete power devices to be embedded in a laminate construction (in which conventional packaging techniques, such as clips, wire bonds and moulding compounds have been replaced with ...

GaN Systems is offering its devices to contestants entering the Little Box Challenge launched by Google and the IEEE. This is an open competition with a $1m prize for the team who can build the smallest, highest power density kW-scale inverter – at least 50W per cubic inch. Size-wise, the goal for competitors is to shrink an inverter from the size of a picnic cooler down to something smaller than a laptop computer.

  According to GaN Systems, GaN will become the core technology in power electronics within the next three years. Founded seven years ago, GaN Systems has developed a wide range range of GaN, high power transistors based on its Island Technology design.

At EPE ’14 ECCE Europe, 26th to 28th August in Finland, GaN Systems will present its latest devices, including a series of normally-off 100V GaN transistors and a low inductance, thermally-efficient 650V transistor family. The power semiconductors target applications such as onboard battery charging, high-voltage DC/DC and AC/DC conversion, UPS, air-conditioning, home appliances, heavy-duty battery-operated power tools and E-bikes.

GaN Systems Inc has moved into its new headquarters and R&D facility at 1145 Innovation Drive, Ottawa, Canada. Located at the heart of Kanata’s high technology community, the move was necessitated by the company’s expansion over the past twelve months and plans for continued rapid growth as GaN devices replace legacy silicon-based semiconductors in power conversion and control applications worldwide.

PCIM 2014: Five normally-off 100V GaN transistors and a 650V normally-off GaN transistor family have been introduced by GaN Systems. The GS61002P, GS61004P, GS61006, GS61008P and GS71008P areoptimised for high speed designs, with low on resistance and total gate charge.

  Jim Witham has been appointed to the role of CEO at GaN Systems. Witham has over thirty years’ experience in business development, international sales and marketing and operations management and joins GaN Systems from Neoconix.

Charles Bailley has been appointed as the Senior Director, Technical Marketing, Asia, at GaN Systems. Effective March 3rd, Bailley’s appointment is part of the company’s strategy of increasing headcount worldwide to support early adopters of GaN-based devices as automotive, industrial and enterprise equipment manufacturers replace legacy silicon-based semiconductors with GaN power devices to achieve higher efficiency, power density an...

Tony Astley has been appointed as Director of European Operations at GaN Systems, with immediate effect. Having overall responsibility for all aspects of GaN Systems’ business in Europe, the Middle East and Africa, Astley will further develop its presence in the region (representing almost 20% of the world’s total market for power device sales).

GaN Systems has appointed US engineering consultancy Vqdot as an Applications Development Partner. Vqdot specialises in the development and testing of high-performance power supplies and will partner with GaN Systems to advise companies on the use of gallium nitride power semiconductors across a broad range of applications.

GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is presenting a paper on new wide-bandgap semiconductors and their role in transforming automotive power electronics at the Electric & Hybrid Vehicle Conference & Expo in Michigan  17 - 19  September.   Manufacturers are currently designing vehicles to be launched onto the market in 2018, coinciding with the timeframe leading foreca...

Une équipe d’experts en nitrure de gallium de GaN Systems Inc présentera une communication majeure au 224ème Electrochemical Energy Summit de l’ECS (Electrochemical Society) à San Francisco, Californie, du 27 octobre au 1er novembre. Intitulée "Characterization and performance of D-Mode GaN HEMT transistor used in a cascode configuration" et signée par Tom MacElwee, John Roberts, Hughes Lafont...

GaN Systems is exhibiting at the 15th ECCE European Conference and Exhibition taking place in the historic city of Lille, France from 3 – 5 September. GaN Systems develops the most complete range of gallium nitride power switching solutions available and is focussed on the easy adoption of gallium nitride by design and systems engineers.

GaN Systems has today announced that a team of its experts on gallium nitride technologies will present a major conference paper at the 224th ECS Electrochemical Energy Summit (San Francisco, California October 27 – November 1). Authored by Tom MacElwee, John Roberts, Hughes Lafontaine, I. Scott, Greg Klowak, and Lyubov Yushyna, the “Characterisations and performance of D-Mode GaN HEMT transistor used in a cascode configuration”...

GaN Systems announce that Rinehart Motion Systems has been appointed as an Accredited Systems Integration Partner. RMS has a track record of excellence in the design of traction inverters and power modules for transportation and other applications, with deep expertise in a wide range of areas from die packaging to systems architecture.

GaN Systems will exhibit at the PCIM conference and exhibition and conference. Visitors to stand 523, Hall 9 will be able to take advantage of a special introductory offer covering the company’s soon-to-be-available evaluation kits.

Arkansas Power Electronics International and GaN Systems announce the test results for a gallium nitride power switch based DC-DC boost converter. The converter demonstrated at APEI exploited the ultra-high switching capability of GaN Systems’ high power switch to achieve a 1 MHz switching capability. In addition, the boost converter was able to demonstrate over 98.5% efficiency at 5 kW output power. Testing demonstrated turn-on and turn-off tr...

GaN Systems has announced special pricing for its gallium nitride evaluation kits for customers who pre-order at the APEC (Long Beach, Ca, March 17-21) and PCIM (Nuremburg, Germany, May 14-16) power events.

GaN Systems announced today the opening of a new office facility located in Reading, England. This expansion of the Company’s European operations will aid the Company in continuing to impact key industries, like manufacturing and automotive, where the need for clean technology power conversion applications continue to grow. GaN Systems’ head office is currently located in Ottawa, Canada.