Power densities are increasing three times or more in many applications as the demand for more power in electronics continues to increase, while the space allowable for power continues to decrease. This increase in power has the collateral effect of producing more heat. More heat traditionally results in the use of higher capacity fans and bigger heat sinks to prevent overheating of the electronic components and system failure.

  At the upcoming 2017 Applied Power Electronics Conference and Exposition (APEC 2017), in Tampa, Florida, visitors will see gallium nitride (GaN) transistors in action.

GaN Systems has witnessed a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognised that GaN devices significantly improve power efficiency and power density. 

As 2017 begins to unfold, I’d like to recount some of last year’s key accomplishments and provide some perspective on our expectations for the New Year. Looking back, I am struck by the number of significant gains GaN Systems enjoyed last year pertaining to the adoption of GaN technology by customers, as well as the global growth of our sales and support ecosystem. Some of our 2016 key developments include:

GaN Systems has joined the AirFuel Alliance, a global, nonprofit consortium of industry leaders responsible for developing wireless charging standards. GaN Systems will aid the alliance by bringing its wireless technology experience, by extending beyond the previously assumed limits of wireless charging, and by assisting the development of global wireless charging standards.

Electronic Specifier Editor Joe Bush spoke to Jim Witham, Chief Executive Officer of GaN Systems at electronica about the company’s offer of gallium nitride (GaN) power transistors and the role they are playing in the world’s energy reduction needs of the future.

Co-founder and Chief Technology Officer of GaN Systems, John Roberts, will deliver the keynote address at the 4th IEEE Power Electronics Society Workshop on Wide bandgap Power Devices and Applications (WiPDA). 

GaN Systems has announced that it will demonstrate its GS66540C 650V 100A high current GaN power transistor at ECCE’15, the IEEE Energy Conversion Congress & Expo in Montreal, from 20th to 24th September. GaN Systems is delighted to be showcasing its family of Island Technology GaN transistors, the broadest and most complete on the market, at this premier global event being hosted in its home country.

GaN Systems will be displaying its GS66540C 650V, 100A GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe. Hosted by CERN in Geneva from 8th to 10th September, the conference and exhibition bring together leading industry figures in power electronics and experts from research and academic institutions to share knowledge and display cutting-edge developments in power te...

GaN Systems last week showcased the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors on Booth 4D18 at PCIM Asia in Shanghai. Based on three core proprietary technologies, the GS65516T GaN high-power enhancement-mode device boasts the highest current capability on the market at 60A.

  Exhibiting at PCIM Asia from the 24th-26th of June, GaN Systems will be showcasing the latest addition to its range of GaN high power transistors for the first time in China, at booth 4D18. The company is also demonstrating production models of real customer applications using its devices.

GaN Systems has confirmed what it calls the ‘world’s smallest’ 650V, 15A gallium nitride transistor, in the wake of the 2015 PCIM conference in Nürnberg, Germany. With a footprint of just 5.0x6.5mm, the GS66504B - one of a family of 650V devices that spans 7 to 200A - is 50% smaller than competing devices.

  Topside cooling, first announced by GaN Systems in March, has been used in the GS66516T 650V E-Mode power switch, which is claimed to have the highest current capability available at 60.

GaN Systems is showcasing three customer applications incorporating its Island Technology devices for the first time on its stand at PCIM Europe. The customer products being displayed are finished production items. Each has been designed by the customer to bring the unique benefits offered by GaN Systems’ broad product range of small highly-efficient, industrial-scale power switching transistors to its particular market.

GaN Systems is presenting a paper titled The Automotive Market Opportunity for GaN at the PCIM Europe Conference in Nuremberg. The presentation will be given by the President, GaN Systems, Girvan Patterson on 20th May at 11.00am during a special session in the Brüssel Room chaired by Achim Scharf from Techmedia International.

An enhancement-mode power switch, claimed to feature the highest current capability on the market at 60A, has been released by GaN Systems. The GS65516T features the company’s proprietary topside cooling configuration, which allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques.

The developer of gallium nitride power switching semiconductors, GaN Systems, has announced a $20m venture capital financing. Cycle Capital Management led the round and was joined by BDC Capital and Tsing Capital, as well as existing investors Chrysalix Energy Venture Capital and RockPort Capital.

GaN Systems has announced the appointment of Stephen Coates as Vice President of Operations. The recent post is part of GaN Systems’ planned increase in headcount at all levels as the company ramps up production of its market-leading gallium nitride devices based on its unique Island Technology design to supply global demand from design engineers.

GaN Systems has added a topside cooling technology to its wide range of high-power enhancement-mode devices. Topside cooling enables engineers to use conventional, well-understood PCB cooling techniques when incorporating GaN Systems’ semiconductors into designs for products such as inverters, UPS, EVs, HEVs, high voltage DC-DC conversion and consumer products such as TVs.

GaN Systems is participating in what promises to be a lively debate on one of the hottest topics at APEC 2015. Wide Bandgap Semiconductor devices in Power Electronics – Who, What, Where, When and Why? will be hosted and led by Kevin Parmeter, Vice President of Applications, Excelsys, and will see panellists from device manufacturers joining power electronics design engineers to air their views.