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Alliance Memory, Inc.

Alliance Memory, Inc. Articles

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Memory
22nd May 2017
RoHS-compliant SRAMs offer low power consumption

To meet the demand for high-density fast CMOS SRAMs, Alliance Memory has introduced new 8Mb and 16Mb x32 devices in the 90-ball 8x13mm TFBGA package. Providing space-saving alternatives to solutions in larger 119-ball packages, the devices are optimised for networking routers and switchers, test and medical equipment, and automotive applications. Featuring access times of 10ns and data retention voltages of 1.5V minimum, the 8Mb AS7C325632-1...

Memory
28th April 2017
1Gb High-Speed CMOS DDR SDRAM comes in 128M x 8 configuration

  Alliance Memory has introduced a 1Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Offered in an industrial temperature range from -40°C to +85°C, the AS4C128M8D1-6TIN features a hard-to-find internal configuration of four banks of 32M word x 8 bits.

Memory
18th April 2017
High speed SDRAMs increase portable electronics battery life

A new line of high-speed CMOS mobile low-power DDR2 (LPDDR2) SDRAMs has been introduced by Alliance Memory. They have densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. The devices offer a variety of power-saving features, including 1.2/1.8V operating voltages, to extend battery life in portable electronics, while their high density enables slim designs. The LPDDR2 SDRAMs provide reliable drop-in, pin-to-pin compatible replace...

Memory
7th April 2017
512Mb SDRAMs provide pin-for-pin replacements for discontinued Micron devices

Alliance Memory has introduced two 512Mb synchronous DRAMs (SDRAM) in the 54-pin TSOP II package. The AS4C32M16SB-7TCN and AS4C32M16SB-7TIN are available in commercial (0 to +70°C) and industrial (-40 to +85°C) temperature ranges. The devices provide pin-for-pin replacements for Micron Technology's discontinued 32M x 16 MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN) and MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN) SDRAMs.

Power
1st March 2017
LPDDR3 SDRAM optimises battery life

Alliance Memory today introduced a new high-speed CMOS mobile low-power DDR3 (LPDDR3) SDRAM designed to extend battery life in compact portable devices. Featuring low voltage operation of 1.2V/1.8V and a number of power-saving features, the 16Gb AS4C512M32MD3 is offered in the 11.0mm by 11.5mm 178-ball FBGA package. With each new product generation, designers of mobile devices such as smartphones, tablets, and VR and AR headsets are tasked w...

Analysis
2nd February 2017
Alliance Memory expands rep agreement with ISMOSYS

Alliance Memory announced that the company has expanded its manufacturers' representative agreement with ISMOSYS, the principal trading division of the Spectrum Electronics Group. Having offered Alliance Memory's entire lineup of SRAMs and DRAMs in Italy since 2006, ISMOSYS is now the exclusive representative for the company's memory solutions to direct OEMs and distributor channels in Spain, Portugal, and Turkey.

Power
24th November 2016
Automotive grade memory portfolio expanded

It has been announced that Alliance Memory's Synchronous DRAM (SDRAM) portfolio now features a variety of components that provide an automotive temperature range of -40 to 105°C and are fabricated and assembled to automotive quality standards. Alliance Memory offers a complete lineup of high-speed CMOS SDRAMs, including Double Data Rate (DDR), DDR2, and DDR3 devices. 

Memory
6th October 2016
New lower power consumption extends battery life in mobiles

Two high-speed CMOS mobile synchronous DRAMs (MSDR) have been introduced by Alliance Memory, designed to extend battery life in mobile devices. Featuring low power consumption of 1.8V and a number of power-saving features, the 51Mb AS4C32M16MS and AS4C16M32MS are offered in 8x9x54mm ball and 8x13x90mm ball FPBGA packages.

Power
14th July 2016
8Gb device increases power efficiency for storage systems

Alliance Memory has introduced a  monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8Gb density in the 78-ball, 9x13.2mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1,600Mbps/pin and clock rates of 800MHz.

Memory
28th June 2016
256M CMOS SDRAMs are offered in 86-Pin TSOP II packages

Alliance Memory has extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two x32 devices in the 86-pin, 400mm, plastic TSOP II package. Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical and networking products requiring high memory band...

Analysis
10th June 2016
Alliance Memory selling discontinued Micron Semiconductor devices

Alliance Memory has announced that the company is selling Micron Semiconductor lead (Pb)-bearing double data rate (DDR), double data rate 2 (DDR2), and single data rate (SDR) devices that Micron discontinued with Micron PCN #31396 (last time buy: April 15, 2015; last time ship: Nov. 30, 2015).

Memory
26th May 2016
Low-power CMOS SRAMs offer fast access time of 55ns

Expanding its line of legacy low-power CMOS SRAMs, Alliance Memory has announced an 8M IC (512k x 16-bit) in the 48-pin 12x20mm TSOP-I package. Available from a very limited number of suppliers and recently discontinued by another manufacturer, the AS6C8016-55TIN operates from a single power supply of 2.7 to 3.6V and offers a fast access time of 55ns.

Memory
15th July 2015
CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package

A monolithic high-speed, low-voltage CMOS DDR3L SDRAM with an 8Gb density in a 96-ball, 9x14mm, lead (Pb)-free FBGA package has been released by Alliance Memory. Featuring silicon provided by Micron Technology, the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600Mbps/pin and clock rates of 800MHz.

Memory
25th June 2015
High speed CMOS DDR2 SDRAM features high 2Gb density

Alliance Memory has broadened its lineup of high-speed CMOS DDR2 SDRAMs with a device featuring high 2Gb density in the 84-ball 8x12.5x1.2mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 to +85°C) and industrial (-40 to +95°C) temperature ranges.

Memory
27th May 2015
SDRAM devices available with original Micron part numbers

  Alliance Memory has announced that its 512M SDRAM devices, which it recently acquired from Micron Semiconductor, will be available with their original Micron part numbers into 2017. 

Memory
7th April 2015
CMOS DDR SDRAMs feature fast clock rates of 200MHz & 166MHz

A line of high-speed CMOS DDR SDRAMs, which provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications and telecomms products, has been introduced by Alliance Memory. The line of devices consists of the AS4C32M8D1, a 256Mb DDR SDRAM, the AS4C64M8D1 a 512Mb DDR SDRAM and the AS4C64M16D1, a 1Gb DDR SDRAM. The devices are available in a 60-ball 8x13x1.2mm TFBGA package or a ...

Memory
21st October 2014
Discontinued synchronous DRAMs get new lease of life

Alliance Memory has partnered with Micron Semiconductor to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995. Alliance Memory will be offering Micron's 32M x 16 MT48LC32M16A2P-75:C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C.

Memory
18th September 2014
DDR SDRAMs extend battery life in compact portable devices

Designed to increase efficiency and extend battery life in compact portable devices, a line of high-speed mobile CMOS DDR SDRAMs has been released by Alliance Memory. The AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1 and AS4C64M32MD1 modules are available in 256Mb, 512Mb, 1Gb and 2Gb and feature low power consumption of 1.7-1.95V.

Events News
12th September 2014
CMOS SDRAMs and mobile SDRAMs to be exhibited at electronica

High-speed CMOS SDRAMs and mobile low-power DDR, DDR2 and DDR3 SDRAMs, which feature a wide range of densities, configurations, package options and temperature ratings, are to be exhibited at electronica 2014 in Hall A5, Booth 224. The drop-in, pin-for-pin-compatible devices, manufactured by Alliance Memory, are suitable for use products requiring high memory bandwidth.

Memory
27th June 2014
1Gb, 2Gb & 4Gb SDRAMs launched in FPGA packages

Alliance Memory has introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

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