Alliance Memory, Inc.

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Alliance Memory, Inc. articles

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New lower power consumption extends battery life in mobiles

New lower power consumption extends battery life in mobiles
Two high-speed CMOS mobile synchronous DRAMs (MSDR) have been introduced by Alliance Memory, designed to extend battery life in mobile devices. Featuring low power consumption of 1.8V and a number of power-saving features, the 51Mb AS4C32M16MS and AS4C16M32MS are offered in 8x9x54mm ball and 8x13x90mm ball FPBGA packages.
6th October 2016

8Gb device increases power efficiency for storage systems

8Gb device increases power efficiency for storage systems
Alliance Memory has introduced a  monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8Gb density in the 78-ball, 9x13.2mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1,600Mbps/pin and clock rates of 800MHz.
14th July 2016

256M CMOS SDRAMs are offered in 86-Pin TSOP II packages

Alliance Memory has extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two x32 devices in the 86-pin, 400mm, plastic TSOP II package. Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical and networking products requiring high memory bandwidth.
28th June 2016


Alliance Memory selling discontinued Micron Semiconductor devices

Alliance Memory has announced that the company is selling Micron Semiconductor lead (Pb)-bearing double data rate (DDR), double data rate 2 (DDR2), and single data rate (SDR) devices that Micron discontinued with Micron PCN #31396 (last time buy: April 15, 2015; last time ship: Nov. 30, 2015).
10th June 2016

Low-power CMOS SRAMs offer fast access time of 55ns

Low-power CMOS SRAMs offer fast access time of 55ns
Expanding its line of legacy low-power CMOS SRAMs, Alliance Memory has announced an 8M IC (512k x 16-bit) in the 48-pin 12x20mm TSOP-I package. Available from a very limited number of suppliers and recently discontinued by another manufacturer, the AS6C8016-55TIN operates from a single power supply of 2.7 to 3.6V and offers a fast access time of 55ns.
26th May 2016

CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package

CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package
A monolithic high-speed, low-voltage CMOS DDR3L SDRAM with an 8Gb density in a 96-ball, 9x14mm, lead (Pb)-free FBGA package has been released by Alliance Memory. Featuring silicon provided by Micron Technology, the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600Mbps/pin and clock rates of 800MHz.
15th July 2015

High speed CMOS DDR2 SDRAM features high 2Gb density

High speed CMOS DDR2 SDRAM features high 2Gb density
Alliance Memory has broadened its lineup of high-speed CMOS DDR2 SDRAMs with a device featuring high 2Gb density in the 84-ball 8x12.5x1.2mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 to +85°C) and industrial (-40 to +95°C) temperature ranges.
25th June 2015

SDRAM devices available with original Micron part numbers

SDRAM devices available with original Micron part numbers
  Alliance Memory has announced that its 512M SDRAM devices, which it recently acquired from Micron Semiconductor, will be available with their original Micron part numbers into 2017. 
27th May 2015

CMOS DDR SDRAMs feature fast clock rates of 200MHz & 166MHz

CMOS DDR SDRAMs feature fast clock rates of 200MHz & 166MHz
A line of high-speed CMOS DDR SDRAMs, which provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications and telecomms products, has been introduced by Alliance Memory. The line of devices consists of the AS4C32M8D1, a 256Mb DDR SDRAM, the AS4C64M8D1 a 512Mb DDR SDRAM and the AS4C64M16D1, a 1Gb DDR SDRAM. The devices are available in a 60-ball 8x13x1.2mm TFBGA package or a 66-pin TSOP II package with a 0.65mm pin pitch.
7th April 2015

Discontinued synchronous DRAMs get new lease of life

Alliance Memory has partnered with Micron Semiconductor to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995. Alliance Memory will be offering Micron's 32M x 16 MT48LC32M16A2P-75:C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C.
21st October 2014

DDR SDRAMs extend battery life in compact portable devices

DDR SDRAMs extend battery life in compact portable devices
Designed to increase efficiency and extend battery life in compact portable devices, a line of high-speed mobile CMOS DDR SDRAMs has been released by Alliance Memory. The AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1 and AS4C64M32MD1 modules are available in 256Mb, 512Mb, 1Gb and 2Gb and feature low power consumption of 1.7-1.95V.
18th September 2014

CMOS SDRAMs and mobile SDRAMs to be exhibited at electronica

CMOS SDRAMs and mobile SDRAMs to be exhibited at electronica
High-speed CMOS SDRAMs and mobile low-power DDR, DDR2 and DDR3 SDRAMs, which feature a wide range of densities, configurations, package options and temperature ratings, are to be exhibited at electronica 2014 in Hall A5, Booth 224. The drop-in, pin-for-pin-compatible devices, manufactured by Alliance Memory, are suitable for use products requiring high memory bandwidth.
12th September 2014

1Gb, 2Gb & 4Gb SDRAMs launched in FPGA packages

1Gb, 2Gb & 4Gb SDRAMs launched in FPGA packages
Alliance Memory has introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
27th June 2014

32-bit high-speed CMOS SDRAMs with 5.4ns access time

32-bit high-speed CMOS SDRAMs with 5.4ns access time
Expanding the company's portfolio of high-speed CMOS synchronous DRAMs (SDRAMs), Alliance Memory has introduced the 2m x 32 AS4C2M32S-6TIN, AS4C2M32S-6BIN and AS4C2M32S-7BCN; 4m x 32 AS4C4M32S-6TIN, AS4C4M32S-6BIN and AS4C4M32S-7BCN; and 8m x 32 AS4C8M32S-7BCN x32 devices in the 90-ball 8x13x1.2mm TFBGA, and 86-pin 400-mil plastic TSOP II packages.
27th March 2014

CMOS DDR2 SDRAMs available in 512Mb & 1Gb densities

CMOS DDR2 SDRAMs available in 512Mb & 1Gb densities
A line of high-speed CMOS DDR2 SDRAMs has been announced by Alliance Memory. The devices feature densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8 x 10 x 1.2-mm and 84-ball 8 x 12.5-x 1.2-mm FBGA packages.
10th March 2014

High-speed DDR SDRAMs operate from -40°C to +85°C

High-speed DDR SDRAMs operate from -40°C to +85°C
A line of high-speed CMOS DDR SDRAMs with densities of 64Mb, 128Mb, 256Mb and 512Mb has been announced by Alliance Memory. The 64Mb (AS4C4M16D1-5TIN), 128Mb (AS4C8M16D1-5TIN), 256Mb (AS4C16M16D1-5TIN), and 512Mb (AS4C32M16D1-5TIN) devices havew an industrial temperature range of -40°C to +85°C.
26th February 2014

Alliance Memory appoints Director of Operations

Alliance Memory appoints Director of Operations
K. K. Fan has joined Alliance Memory as its director of operations in Taiwan. Mr. Fan holds a bachelor's degree in industrial management from the National Taiwan University of Science and Technology and an MBA in technology management from the National Chiao Tung University.
20th February 2014

CMOS DDR SDRAMs for high-performance PC applications

CMOS DDR SDRAMs for high-performance PC applications
Extending its 64M and 128M lines of high-speed CMOS synchronous DRAMs, Alliance Memory has today introduced a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package. The AS4C2M32S-7TCN and AS4C4M32S-7TCN provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth.
5th November 2013

High-speed CMOS double data rate synchronous DRAMs

High-speed CMOS double data rate synchronous DRAMs
Alliance Memory introduce a new line of high-speed CMOS double data rate synchronous DRAMs  with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1). These devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and they are particularly well-suited to high-performance PC applications.
19th September 2013

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs

Alliance Memory Launches Two New 16M Fast (10 ns) CMOS SRAMs
Alliance Memory today expands its line of legacy high-speed CMOS SRAMs with two new 16M ICs. Featuring fast access times of 10 ns, the AS7C316096A (2048K x 8) and AS7C316098A (1024K x 16) are both offered in the 48-pin, 12-mm by 20-mm TSOP-1 package.
12th June 2013


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