Boards evaluate GaN E-HEMT performance

22nd November 2016
Posted By : Mick Elliott
Boards evaluate GaN E-HEMT performance

Availability and full design support capabilities for a family of evaluation boards from GaN Systems have been announced by Richardson RFPD. The GS665XXX-EVBDB daughterboard evaluation kits consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.

The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topology, either with the GS665MB-EVB universal motherboard or the user’s own system design.

According to GaN Systems, additional key features of the new evaluation boards include vertical-mount style with height of 35 mm, which fits in the majority of 1U designs and allows evaluation of GaN E-HEMTs in traditional through-hole power supply boards, current shunt position for switching characterisation testing and universal form factor and footprint for all products.

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