The Gallium nitride (GaN) devices market is expected to explode, says Yole Développement (Yole) in its technology and market analysis entitled “GaN & SiC for power electronics applications”.
Yole proposes two scenarios, from 2014 to 2020, based on the penetration rate of GaN: the differentiating factor, compared with the silicon carbide (SiC) solutions’ adoption, is mainly focused on below 200V and 600V applications.
After the adoption phase of the Wide Band Gap (WBG) technologies, how will GaN and SiC technologies cohabite? Will they enter in direct competition or become complementary technologies?
In parallel, Yole’s partner, KnowMade proposes another analysis of the GaN market with a detailed patent investigation, entitled Power GaN Devices for Power Electronics (Sep. 2015). This report reviews the challenges dedicated to the technologies, analyse the business opportunities and detail a competitive IP landscape.
“In the nominal scenario, we estimate the GaN device market size will be US$303 million in 2020,” explains Dr Hong Lin, Technology & Market Analyst at Yole. And she adds: “In the accelerated scenario, where low voltage GaN and 600V GaN are rapidly adopted, market figure for 2020 reaches US$560M."