Series configured with a silicon or InGaAs APD
The characteristics of an APD are often restricted by the transimpedance amplifier which needs to be chosen in such a way that the S/N ratio is optimised. LASER COMPONENTS can offer its customers a complete solution with the preamplifier matched to the APD.
The H0 series can be configured with either a Silicon or InGaAs APD and is housed in a hermetically sealed, modified 5 pin TO-46 package which contains the optimised low noise hybrid preamplifier.
The Silicon APD chips have an active element diameters of 500 and 1500 microns covering the wavelength range 400 to 1100nm and offer bandwidths up to 20MHz and a single ended output, the peak sensitivity of the device is at 890nm.
The internal electric field within the APD generates a large photocurrent and this combined with the performance of the amplifier generates a large responsivity, typically 3MV/W at 890nm.
The devices are used extensively in laser range finding, LiDAR and medical applications.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
| SKU: | |
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| Stock: | 3490 |
| Cost: | $3.95 |
