ROHM Semiconductor To Present Brand New Designs At PCIM 2013

29th April 2013
Posted By : ES Admin
ROHM Semiconductor To Present Brand New Designs At PCIM 2013
ROHM Semiconductor will present its latest products and technologies at PCIM, the leading trade fair for power electronics in Nuremberg, from May 14 to 16 (Hall 9, Booth 211). The novelties offer beneficial characteristics resulting from latest material research, packaging and process know-how. They address the ever increasing demand for ultra-low energy consumption, miniaturization, reliability, reduced component count and costs while providing the best possible performance.

1. Second Generation SiC MOSFETs
Adding to its broad range of SiC products, ROHM will present its new line-up expansion of N-channel Silicon Carbide Power MOSFETs. The SCT2xx series without Schottky diode features different on-resistance types and max. currents in a TO247 package. They provide significantly lower power loss and handle a maximum junction temperature of 175°C which is unmatched in the market. With low on-resistance, high breakdown voltage, high speed switching and reverse recovery these new MOSFETs are easy to parallel and to drive which makes them ideal for deployment in solar inverters, DC-DC converters, switch mode power supplies, induction heating or motor drives.

2. Hybrid MOSFETs
ROHM will demonstrate a newly developed transistor combining the advantages of a MOSFET and IGBT to a “hybrid MOS” by adopting a new device structure to the PFC circuit for the power supply. The new hybrid MOSFET is featuring the “best of both worlds” - -high-speed switching characteristics, low-current performance of the MOSFET and high breakdown voltage of the IGBT. As a result, the high temperature and high current performance improved significantly while energy saving is possible over the full range – from small to large currents. The product is expected to begin sampling in summer 2013.

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