Richardson RFPD guide focuses on Silicon Carbide devices

30th January 2014
Posted By : Mick Elliott
Richardson RFPD guide focuses on Silicon Carbide devices

Richardson RFPD has published a new Silicon Carbide (SiC) Products Brochure featuring the latest products from Cree, Microsemi, Powerex and Vincotech. The 8-page quick reference guide highlights SiC Schottky diodes (600V, 650V, 1200V and 1700V, 1A – 60A), SiC MOSFETs (1200V and 1700V), full SiC modules (1200V, up to 270A) and Si/SiC hybrid modules (600V – 1200V, up to 116A).

 

SiC offers significant advantages to systems designers, including improved efficiencies due to decreased thermal dissipation, higher operating junction temperatures, smaller system size, higher power density, higher operating frequency, and reduced overall system cost.

The new brochure is Richardson RFPD's latest resource designed to support its energy and power market customers and their design activities with this rapidly-expanding technology.

Earlier this year, Richardson RFPD launched its SiC Tech Hub, a micro-website featuring the latest products and innovations from the world's leading SiC suppliers, along with extensive design resources, such as application notes, brochures, datasheets, presentations, selector guides, supplier documentation, technical articles and videos.


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