Voltage scalable transistors result in more dies per wafer

The voltage scalable High-Voltage NMOS and PMOS transistor devices are optimised for various drain-source voltage levels (V_DS) from 20 to 100V and provide significant lower RDS_(ON) thus resulting in area savings. Using an optimised 30V NMOS transistor in power management applications instead of a fixed 50V transistor results in an area saving of approximately 50%. A 60V optimised NMOS device results in 22% less area when compared to a standard 120V NMOS transistor.

The area-optimised devices are suited for a wide range of applications such as MEMS drivers, motor drivers, switches and PMICs used in automotive, medical and industrial products. ams’ Full Service Foundry division is among first foundries worldwide offering true voltage scalable transistors to its foundry customers. Being fully automotive (ISO/TS 16949) and medical (ISO 13485) certified, ams supports highest quality requirements from its customers.

“Being among first foundries worldwide offering true voltage scalable devices, proves ams’ expertise in developing specialty High-Voltage CMOS processes and providing excellent manufacturing services. ams’ foundry team is looking forward to teaming up with product developers who are creating advanced High-Voltage products”, said Markus Wuchse, General Manager, Full Service Foundry Division, ams. “Our hitkit, the ams benchmark Process Design Kit as well as our High-Voltage process expertise enable our partners to optimise their HV integrated circuits towards area and on-resistance, which immediately results in more dies per wafer.”

This latest High-Voltage process extension is an add-on to the company’s “More Than Silicon” portfolio, under which ams provides a package of technology modules, intellectual property, cell libraries, engineering consultancy and services to help customers successfully develop advanced analog and mixed-signal circuit designs based on its specialty technologies.