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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low RDS(on) and Improved Gate Charge

12th July 2010

Vishay

ES Admin

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Datasheet

Vishay Intertechnology, Inc. today released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages.

The low on-resistance of the SiHP12N50C-E3 (TO-220), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D2PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulsewidth modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC and LCD TVs, and open-frame power supplies.

In addition to their low on resistance, the devices feature a gate charge of 48 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 26.64 Ω-nC.

The new n-channel MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. Compared to previous-generation MOSFETs, the SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and losses.

The devices are compliant to RoHS Directive 2002/95/EC and 100 % avalanche-tested for reliable operation.