600V Vishay Siliconix Super Junction FET Power MOSFETs Feature 0.190-OHM On-Resistance in TO-220, TO-220F, TO-247, and TO-263 Packages

The new SiHP22N60S (TO-220), SiHF22N60S (TO-220 FULLPAK), SiHG22N60S (TO-247), and SiHB22N60S (TO-263) combine their 600-V rating with an ultra-low 0.190 Ω maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, switch mode power supplies (SMPS), and telecom systems.

In addition to their low on resistance, the devices feature a low gate charge of 98 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 18.62 Ω*nC.

For reliable operation, the devices are 100 % avalanche tested and feature high repetitive (EAR) avalanche energy capabilities. Peak current handling is 65 A pulsed and 22 A continuous. All four devices feature an effective output capacitance specification.

Compared to previous-generation 600-V power MOSFETs, the new devices offer improved transconductance and reverse recovery characteristics. The MOSFETs are compliant to RoHS Directive 2002/95/EC.

Samples of the new Super Junction FET MOSFETs are available now. Production quantities will be available in Q1 2010, with lead times of 8 to 10 weeks for larger orders.