Vishay Siliconix Releases 30 V N-Channel and 20 V P-Channel TrenchFET Power MOSFETs in Compact Thin PowerPAK SC-70 Package With Ultra-Slim 0.6 mm Profile

For handheld devices requiring an n-channel MOSFET that is thinner than the standard 0.8 mm, the SiA444DJT's 0.6 mm profile is 13 % less than the next-thinnest 2 mm by 2 mm device and 19 % less than the standard 0.8 mm height. In addition, the MOSFET offers low on-resistance of 17 mΩ at 10 V and 22 mΩ at 4.5 V, and the lowest maximum on-resistance multiplied by gate charge product — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — of 170 mΩ-nC at 10 V and 110 mΩ-nC at 4.5 V.

If a thinner p-channel is needed, the SiA429DJT provides the lowest on-resistance of 20.5 mΩ at 4.5 V, 27 mΩ at 2.5 V, 36 mΩ at 1.8 V, and 60 mΩ at 1.5 V. The device's on-resistance at 1.8 V is 12 % lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile and all 2 mm by 2 mm p-channel MOSFETs. For handheld electronics, the lower on-resistance of the SiA429DJT and SiA444DJT translates into lower conduction losses, thus prolonging battery life between charges.

The ultra-slim Thin PowerPAK SC-70 package of the SiA444DJT and SiA429DJT is optimized for small handheld electronics, including cell phones, smartphones, MP3 players, digital cameras, eBooks, and tablet PCs. In these devices, the SiA444DJT will be used for high-frequency DC/DC converters, while the SiA429DJT is ideal as a load switch or charger switch and can also be used as a high-side switch in DC/DC buck converter applications.

The MOSFETs are 100 % Rg tested and are halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.