Power MOSFETs from NEC are robust

10th December 2007

ES Admin

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NEC Electronics Europe has announced it has extended its portfolio of low-voltage power management devices (PMD). Part of the NP-Series, the new MOSFETs feature improved ruggedness, with respect to avalanche capability and channel temperature, combined with low values for on-state resistance (RDS(on)) and input capacitance (Ciss). Devices with two VDSS ratings (40 V and 55 V), two ID (DC) ratings (90 A, 100 A) and logic/non-logic gate drive types are available in three popular packages, TO-220, TO-262 and TO-263ZP. All 24 devices are fully AEC-Q101 and RoHS compliant.

The improved ruggedness is achieved by the recently developed UMOS-2R process, an enhancement of NEC Electronics’ UMOS-2 trench process with 0.5 µm design rule. This results in a maximum repetitive avalanche energy rating of 1000 mJ and supports a maximum channel temperature of 200 °C. Typical values for RDS(on) range from 2.9 mΩ to 5.8 mΩ and for Ciss from 5500 pF to 9500 pF.

Meeting the increasing demand for reliable systems, these devices are ideal for applications with higher ambient temperatures (eg, engine cooling fans), higher avalanche capability (eg, HVAC blower motor drives), and higher current capability (eg, electric or electro-hydraulic power steering). Samples are available for all devices and volume production has started.

The NP-Series is part of NEC Electronics’ family of low-voltage switching devices that provides efficient power management for power supplies, automotive systems, motor control, and office, robotic and uninterruptible power applications.