NEC introduces PowerMOSFETs with increased breakthrough voltage for NP-Series

Rated at 100 V, the NP28N10SDE and NP36N10SDE can switch currents up to 28 A and 36 A respectively. Based on NEC Electronics’ UMOS-2 technology, the devices combine RDS(on) values of 41 mΩ (NP28N10SDE) and 27 mΩ (NP36N10SDE) with low gate charge and input capacitance values. Both devices have logic level gate drive capability and are housed in the popular TO-252 (DPAK) SMD package.

Like all members of the NP Series, the devices are qualified to AEC-Q101, support a channel temperature up to 175 °C and are fully RoHS-compliant thanks to tin-plated leads.
The new devices address the growing automotive demand for PowerMOSFETs with higher breakthrough voltage, such as DC/DC converters and injection control for gasoline and diesel injection systems or lighting applications like LED or HID lamps.