Increasing power device performance
When talking about Wide Band Gap (WBG) materials for power electronics applications, it’s usually GaN or SiC that spring to mind. This is a not a surprise - indeed SiC and GaN are currently the most advanced WBG technologies for power electronics applications.
However, there are materials with an even larger band gap which can further increase power device performance. What is the development status of such innovative technologies? Are there already some products available on the market? What is the added value of such materials?
Yole Développement (Yole) proposes a comprehensive overview of the whole WBG solutions dedicated to the power electronics industry. This survey is entitled SiC, GaN and other WBG materials for power electronics applications.
Including a detailed analysis of the most advanced WBG materials, SiC and GaN, Yole’s report also highlights the added value of disruptive technologies such as Ga2O3, diamond and AlN.
Yole’s analysts detail the status of such new solutions and the related technology roadmap. The ‘More than Moore’ market research and strategy consulting company also presents the technical and market challenges facing WBG players.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
| SKU: | |
|---|---|
| Stock: | 3490 |
| Cost: | $3.95 |
