Power

IGBTs & IPMs have high voltage capacities & prevent latch up

16th December 2014
Siobhan O'Gorman
0

Designed for power-efficient motor driving and inverter applications, the Intelligent Power Module (IPM) series has been released by ROHM Semiconductor. The series consists of IGBT based modules optimised for low or high speed operation, and MOSFET based IPMs which integrate the company’s Low Ron SuperJunction MOSFET, PrestoMOS. 10,15 and 20A versions of 600V IGBTs/IPMs are currently available, and 30A versions under development.

By combining gate drivers, bootstrap diodes, IGBTs/power MOSFETs, fly wheel diodes and protection functions within a HSDIP25 package, ROHM meets the demands of motor driving and inverter applications, which require compactness, high integration and reliability. The IGBTs/IPMs feature an aluminium-based Silicon-on-Isolator technology, which provides enhanced high-voltage capacity, high heat conductivity and low leak current, while preventing latch-up.

The IC features a current limit for the bootstrap diode, under voltage lock-out for floating supply, fault output, thermal shut-down and short circuit protection, as well as a FWD (IGBT version) to eliminate flyback, all of which increase reliability. Suitable motor driving and inverter applications include home appliances such as air conditioners, heat-pumps for washing machines and refrigerators.

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