Claimed to have superior switching and EMI performance, the AOTF190A60L is the first in a family of MOSFETs based on Alpha and Omega Semiconductor's aMOS5 HV MOSFET technology.
The MOSFET provides high-efficiency performance and is optimised for server power supplies, high-end computers, charging stations and other high-performance applications.
aMOS5 reduces the on-resistance RDS x A per unit area by 30%, when compared with the previous generation, says the company. This enables lower conduction losses in the application. It also enables future high voltage (HV) product offerings to fulfill the market trend of higher power density in a new, smaller and more efficient package.
Additionally, the technology is claimed to "significantly" improve switching performance compared to major competitors. The MOSFET offers lower total gate charge with much shorter switching plateau time, which helps reduce switching losses.
It is packaged in a moulded TO-220F and has a maximum RDS(ON) of 190mOhm.
The HV MOSFET technology was engineered to provide superior EMI performance by optimising parasitic parameter behaviour. The EMI is controlled with a suppressed reverse recovery current (Irr) and a smoother voltage ramp-up during the device turn off.
"The switched-mode power supply is the energy heart in modern IT equipment," said Simon Lu, marketing director of the company's HV MOSFET product line. "The demand for higher power conversion efficiency is driven by the huge amount of electricity consumed by power supplies around the world. High performance converting topologies such as LLC have become the standard solution for most AC/DC converters used by servers inside data centre and telecommss infrastructure. MOSFET performance is critical to achieving the highest efficiency provided by the power converters. . . the [aMOS5] technology platform targets high efficiency solutions in both PFC and LLC applications," he added.
The MOSFET is immediately available in production quantities with a lead time of 12 to 14 weeks.