GaN power stage cuts EMI, boosts power-stage efficiency

8th September 2017
Posted By : Mick Elliott
 GaN power stage cuts EMI, boosts power-stage efficiency

The LMG5200 gallium nitride (GaN) power stage from Texas Instruments (TI) is in stock at Mouser Electronics. The device delivers 25% lower power losses compared to silicon-based designs, enabling single-stage conversion and providing increased power density and efficiency in space-constrained, high-frequency industrial, telecom, and motor control applications.

The device is an 80V, 10A integrated GaN field-effect transistor (FET) power stage that consists of a high-frequency driver and two 15milliohm GaN FETs in a half-bridge configuration.

It significantly reduces electromagnetic interference (EMI) while increasing power-stage efficiency by minimising packaging parasitic inductances in the critical gate-drive loop, and it features advanced multichip packaging technology.

The device is optimised to support power-conversion topologies with frequencies up to 5MHz.

Transistor–transistor logic (TTL)-compatible inputs can withstand input voltages up to 12V regardless of the VCC voltage.

This allows the inputs to be directly connected to the outputs of an analogue PWM controller with up to 12V power supply, eliminating the need for a buffer stage.

The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

Mouser is also stocking the LMG5200EVM-02 evaluation module, designed to provide engineers with a complete working power stage with an external PWM signal.

The board can be configured as a buck converter, boost converter, or other converter topology using a half bridge.

It can be used to evaluate the performance of the LMG5200 as a hard-switched converter to sample measurements such as efficiency, switching speed and voltage change over time (dV/dt).

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