Power
Fairchild - Generation II XS DrMOS Devices Offer 94% Efficiency in 6mm x 6mm Form Factor
High efficiency, high current handling capability and small form factors are critical to power supply designers when selecting components for voltage regulator solutions. To meet this need, Fairchild Semiconductor developed its family of Generation II XS™ DrMOS [Integrated Driver + MOSFET] devices offering high efficiency and power density to enable designers to meet specific design needs for various applications.
GeneLeveraging the company’s expertise in MOSFETs, gate driver ICs, and packaging technology, Fairchild optimized Generation II XS DrMOS devices for greater efficiency and developed new features. These enhancements make the Generation II XS DrMOS family ideal for applications such as blade servers, high performance gaming motherboards, high performance notebooks, graphic cards, and high current DC-DC point-of-load (POL) converters.
Devices in the portfolio offer a 5V and 3.3V Tristate level to match the Intel® 4.0 DrMOS specification and are compatible with a variety of PWM controllers on the market. The Generation II XS DrMOS portfolio significantly reduces ringing due to PowerTrench® MOSFET Shielded Gate technology in both the control FET and synchronous FET. The synchronous FET also integrates a Schottky diode which eliminates external snubber circuits, improving overall performance and power density while reducing space and cost. Generation II XS DrMOS devices also include a thermal warning feature for customers to prevent over temperature conditions during fault situations.