Power

DC/DC converters power IGBT gate drive circuits

10th November 2016
Caroline Hayes
0
Datasheets

The MGJ6HB (dual), MGJ6FB (triple), and MGJ63P (quad) DC/DC converters from Murata Power Solutions save space and cost while simultaneously powering high-side and low-side gate drive circuits for IGBTs, and Si/SiC MOSFETs in bridge circuits.

The dual, triple and quad independent outputs are externally configurable; a simple circuit provides positive and negative voltages for gate drive power. Using one device for powering all gate drives in a bridge application, the company estimates that between 33 to 50% space saving can be achieved. In a three-phase bridge, the quad-output MGJ63P provides isolated power for the three high-side switch drivers and a common rail for the three low-side switch drivers. This, says the company, potentially replaces up to six discrete DC/DC converters.

The converters offer a 2:1 input voltage range with nominal inputs of 5.0, 12, and 24V. Two, three, or four output channels of 24V provide high isolation between outputs. Outputs can also be connected in parallel or series. The DC/DC converters are suitable for DC link voltages up to 3kV DC and feature a characterised dV/dt immunity of 80kV/µs and a characterised partial discharge performance that provides long service life.

The design of the DC/DC converters include a planar transformer, short circuit and overload protection and a low coupling capacitance of typically 15pF to reduce system EMI problems. A frequency synchronisation pin simplifies EMC filter design, and an enable pin provides for power saving.

UL60950 recognition for reinforced insulation is pending, together with approvals for ANSI/AAMI ES60601-1, two MOOPs, and two MOPPs at different system voltage levels.

 

 

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