Power

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Rogowski current probes target next-gen power semiconductors

Rogowski current probes target next-gen power semiconductors
From Hall 7, Stand 122 at PCIM, Power Electronic Measurements will be showing its full range of Rogowski technology based wide-bandwidth current probes. These include the CWT Ultra-mini with a 1.7mm thick coil small enough to fit between the legs of a TO-220 device, the CWT with coil lengths from 300mm to over 1m for measuring currents in applications as diverse as lightning strikes to leakage currents in machine shafts.
14th May 2015

Discover Tech Power Electronics’ offering at PCIM Europe

Discover Tech Power Electronics’ offering at PCIM Europe
  At PCIM Europe, Tech Power Electronics will show its extensive range of products which includes two new products lines: the Switchy DC/DC converters and the Era Power LED drivers.
14th May 2015

1.9W class-D audio amplifier extends battery life

1.9W class-D audio amplifier extends battery life
Designed for audio systems that need to deliver a high sound pressure level output from a low supply voltage, a 1.9W class-D audio amplifier has been unveiled by Diodes Incorporated. A built-in boost converter generates the voltage rail for the output stage while using a battery-tracking automatic gain control to adjust the gain and limit battery current when the battery voltage is low, prolonging battery life.
14th May 2015


4th gen GaN on Si delivers greater than 70% peak efficiency

4th gen GaN on Si (Gallium Nitride on Silicon) technology, which delivers greater than 70% peak efficiency and 19dB gain for modulated signals at 2.7GHz, has been introduced by M/A-COM Technology Solutions (MACOM). This is similar to GaN on SiC technologies and more than 10% greater efficiency than LDMOS.
14th May 2015

Op amps achieve a bias current of 0.9pA over -40 to 85°C

Op amps achieve a bias current of 0.9pA over -40 to 85°C
Designed for high dynamic range and high speed TransImpedance Amplifier (TIA) applications, the LTC6268-10 and LTC6269-10 single and dual 4GHz FET-input op amps have been released by Linear Technology. These decompensated amplifiers extend the speed and dynamic range capabilities of the company’s ultralow bias current op amp family for applications with a gain of 10 or higher.
14th May 2015

Battery management software improves visibility

At Battcon 2015 in Florida, Emerson Network Power introduced the Alber Battery Xplorer software platform. The software improves visibility and maximises the availability of critical power systems dependent on stationary back-up batteries by translating data into actionable insights that enable smarter, faster decisions.
14th May 2015

SJTs exhibit low on-state & switching losses

SJTs exhibit low on-state & switching losses
Enabling low Turn-On energy losses while offering flexible, modular designs in high frequency power converters, GeneSiC has introduced 20mW, 1200V SiC Junction Transistor-Diodes in an isolated, 4-leaded mini-module package. High frequency, high voltage, low R(ON) SiC Transistors and Rectifiers reduce the size, weight and volume of electronics applications requiring higher power handling at high operating frequencies.
14th May 2015

Industry's first 900V SiC MOSFET offers 65mΩ RDS(ON)

Industry's first 900V SiC MOSFET offers 65mΩ RDS(ON)
Cree has introduced its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimised for high frequency power electronics applications, including renewable energy inverters, EV charging systems and three-phase industrial power supplies, the 900V platform enables smaller and higher efficiency next-gen power conversion systems at cost parity with silicon-based solutions.
14th May 2015

Power modules combine IGBT5 & .XT interconnection technology

Power modules combine IGBT5 & .XT interconnection technology
At PCIM 2015, Infineon Technologies will present the latest generation of its PrimePACK power modules, which benefit from the new generation of Infineon’s IGBTs. The combination of the IGBT5 and the innovative .XT interconnection technology is an important milestone in IGBT chip and interconnection technologies.
13th May 2015

DTMOS IV-H MOSFETs now offered in four pin TO-247 package

DTMOS IV-H MOSFETs now offered in four pin TO-247 package
Targeting PFC for high power smart power stages, Toshiba Electronics Europe has introduced a four pin TO-247 MOSFET package. In conventional three pin TO-247 packages, parasitic induction at the source pin causes increased losses with increasing switching frequency. The TO-247 4L package is equipped with high speed DTMOS-H chips with low QGD to optimise switching behaviour.
13th May 2015


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