Power

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SiC Schottky diodes deliver 50% increase in current density

SiC Schottky diodes deliver 50% increase in current density
  Based on the company’s 2nd gen SiC semiconductor technology, Toshiba Electronics Europe has introduced Schottky Barrier Diodes (SBDs) which deliver current densities up to 50% higher than previous-gen devices and can handle significantly higher forward surge currents.
11th May 2016

All-SiC power module achieves efficiencies over 98%

All-SiC power module achieves efficiencies over 98%
Wolfspeed, a Cree company, has introduced a high-performance 62mm power module, using the company's second generation SiC to produce all SiC power modules, claimed to enable unprecedented efficiency and power density for  converters, inverters, motor drives, industrial electronics and EV systems.
11th May 2016

Precision 16V op amps eliminate post-assembly trimming

Precision 16V op amps eliminate post-assembly trimming
Combining very high accuracy with a wide operating-voltage range and excellent robustness, a series of precision 16V op amps has been unveiled by STMicroelectronics. The TSX7 series features low input-offset voltage no more than 200µV at +25°C, minimum guaranteed Common Mode Rejection Ratio (CMRR) of 91dB and maximum temperature drift of 2.5µV/°C to eliminate any need for trimming or calibration in the assembled circuit.
11th May 2016


Third generation IGBT sets power efficiency benchmarks

Third generation IGBT sets power efficiency benchmarks
1,200V IGBTs, based on third generation Ultra Field Stop technology have been launched at PCIM by ON Semiconductor. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are achieve industry-leading total switching loss characteristics, claims the company, due in part to a wide, highly activated field-stop layer and optimised co-pack diode.
11th May 2016

SiC MOSFET exploit SiC performance

SiC MOSFET exploit SiC performance
Maximising the performance characteristics of SiC, Infineon has announced it is sampling 1,200V SiC MOSFETS. The CoolSiC MOSFETs are available in three- and four- pin package options and improve dynamic loses, especially at high currents.
11th May 2016

Power supply provides low ripple in small areas

Power supply provides low ripple in small areas
A fully integrated switching mode power supply that combines high power density, low ripple, with high efficiency and reliability is being intro-duced by Diversified Technologies, (DTI) of Bedford, MA, USA. The DTI High Voltage Switching Mode DC Power Supply features all solid-state construction and offers 1 to 50kW adjustable power at levels from 100 to 240kW with > 0.02% regulation and 1.5 x 10-3 % peak-to-peak ripple.
10th May 2016

Current transducers measure 25 to 100A DC, AC or pulsed

Current transducers measure 25 to 100A DC, AC or pulsed
Able to be mounted on PCBs or non-intrusive, isolated measurements of DC, AC and pulsed currents from 25 to 100A nominal, LEM has unveiled the LH transducer family. The LH 50-P and LH 100-P are designed for 50 and 100A nominal, respectively, while the LH 25-NP is a multi-range model that can be configured for 8, 12 or 25A, providing the equivalent of three transducers in one device.
10th May 2016

Compact gate drivers feature increased creepage distance

Compact gate drivers feature increased creepage distance
  Infineon has added a number of wide body package options to its EiceDRIVER Compact galvanically isolated gate driver IC family. The 7.62mm (0.3") 1EDI Compact devices are supplied in a DSO-8 package offering increased creepage distances and improved thermal behaviour.
9th May 2016

‘Protect. Control. Sense’ at PCIM 2016

At PCIM Europe 2016 in Nuremberg from 10th to 12th May 2016, Littelfuse will be unveiling families of SiC Schottky diodes and silicon IGBTs in Booth 7-140. An in-booth demonstration will illustrate the capabilities of Monolith’s SiC MOSFET technology with a 5kW buck converter with 675V nominal input and 350V nominal output. The converter switches at high frequencies around 200kHz with an efficiency over 98% that cannot be achieved with silicon IGBTs.
9th May 2016

DC/DC converters deliver 3W in a compact SIP4 package

DC/DC converters deliver 3W in a compact SIP4 package
  Featuring ultra-high power density and a very compact size, the RI3 series of 3W DC/DC converters have been introduced by RECOM. The modules fit into a compact SIP4 case almost the size of a coffee bean (11.5x10.2x7.6mm), making them suitable for applications where space is limited.
9th May 2016


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