NEC Electronics - IGBT/MOSFET gate drive optocoupler with MOSFET-MOSFET output form

5th October 2009
Written by : ES Admin
NEC Electronics - IGBT/MOSFET gate drive optocoupler with MOSFET-MOSFET output form
NEC Electronics has introduced a new IGBT gate drive optocoupler series which are based on a modified output form aiming improved characteristics. The output has changed from Bipolar-MOSFET to MOSFET-MOSFET form with the result of improved switching speed and a reduced output voltage drop achieving more efficient IGBT drive.
The new IGBT gate drivers are designed for 2.5A max. peak output current and will be released in two package versions: The PS9505 comes in a conventional 8-pin dual inline package (DIP) and the PS9305 is offered in a 8-pin shrunk dual inline package (S-DIP) with a pin to pin distance of 1.27mm, reducing the on board footprint to half of a conventional 8-pin DIP.



The PS9505 and PS9305 series consist of a GaAlAs LED at the input side and a photo diode with signal processing circuit and power stage at the output side. The isolated drivers feature the combination of a high speed optocoupler providing high isolation voltage as well as IGBT/MOSFET driving characteristics supplying high output voltage and current.




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