MOSFETs in Robust TO-247 Package from International Rectifier

These new devices, an extension to IR’s family of N-channel MOSFETs, feature low on-state resistance (RDS(on)) and high switching capability while the rugged TO-247 package provides a larger area for heat sinking to improve thermal dissipation compared to a TO-220 package. Incorporating IR’s benchmark HEXFET trench MOSFET technology in a robust TO-247 package these devices offer designers more flexibility where power and thermal performance are a priority.

The new devices are offered lead free and are RoHS compliant.