World's first 16-die stacked NAND flash using TSV
Toshiba has announced the development of the world’s first 16-die (max.) stacked NAND flash memory utilising Through Silicon Via (TSV) technology. The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilises the vertical electrodes and vias to pass through the silicon dies for the connection.
This enables high-speed data input and output, and reduces power consumption. Toshiba’s TSV technology achieves an I/O data rate of over 1Gb/s which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50% power reduction of write operations, read operations, and I/O data transfers.
This NAND flash memory provides a solution for low latency, high bandwidth and high IOPS/W in flash storage applications, including high-end enterprise SSD.
A part of this applied technology was developed by the New Energy and Industrial Technology Development Organisation (NEDO).
The prototype will be shown at Flash Memory Summit 2015, to be held from 11th to 13th August, Santa Clara, USA.
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