The FM24L256 is a 256Kb nonvolatile memory employing Ramtron’s advanced ferroelectric process. F-RAM memories read and write like RAM and provide reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
The FM24L256 performs write operations at bus speed without write delays and the next bus cycle can start immediately without the need for data polling. The device offers write endurance that is orders of magnitude higher than EEPROM and uses much lower power during writes than EEPROM, since write operations do not require an internally elevated power supply voltage for write circuits.
These capabilities make the FM24L256 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
The FM24L256 provides substantial benefits to users of serial EEPROM in a hardware drop-in replacement. The FM24L256 is available in industry standard 8-pin SOIC package, operates from 2.7 to 3.6 volts, and is rated over the industrial temperature range of -40ºC to +85 ºC.