Memory

NAND Flash memory supports 'command queueing'

24th March 2015
Nat Bowers
0

Compliant with JEDEC e•MMC Version 5.1 (released in February 2015), Toshiba Electronics Europe has announced embedded NAND flash memory products supporting 'command queueing' and 'secure write protection' features. The devices are designed for use in a wide range of digital consumer products, including smartphones, tablets and wearable devices.

Demand continues to grow for NAND flash memory that can support applications such as smartphones and tablets. This is particularly true for embedded memories with a controller, which minimise development requirements and ease integration into system designs. Embedded in a system, the 128GB products can record up to 16.3 hours of full spec HD video and 39.7 hours of SD video.

The JEDEC eMMC Version 5.1 compliant interface simplifies system development, allowing manufacturers to minimise development costs and speed up time to market for new and upgraded products. The devices handle all essential NAND memory management functions including wear-levelling, bad block management, garbage collection and error correction. New features standardised in JEDEC eMMC Version 5.1, such as background operations control, cache barrier, cache flushing report and large replay protected memory block write, are applied to the new products to enhance usability.

The 'command queueing' feature allows users to process multiple tasks generated by the user’s issue of multiple commands, in the order of the user’s preference, by initially storing the tasks in a waiting queue. It improves random read performance speed by approximately 30% at maximum compared to products without the feature. It effectively improves the user experience when simultaneously executing multiple applications on mobile devices, including smartphones and tablets. The 'secure write protection' feature expands the conventional write protect feature and protects the user’s important data stored in an assigned area from being overwritten or erased by unauthenticated users.

The new products integrate NAND chips fabricated with 15nm process technology with a controller to manage basic control functions for NAND applications in a single package. Available in a 153 ball FBGA package measuring 11.5x13.0mm, the memory devices feature an HS-MMC interface. They support an operating temperature range of -25 to +85°C, core voltage range of 2.7 to 3.6V and interface voltage ranges of 1.7 to 1.95 and 2.7 to 3.6V.

Samples of the 16 (THGBMHG7C2LBAIL) and 64GB (THGBMHG9C8LBAIG) products are now ready to ship, with 32 (THGBMHG8C4LBAIR) and 128GB (THGBMHT0C8LBAIG) products to follow.

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