F-RAMs provide 100tn read/write cycle endurance
A family of 4Mb serial Ferroelectric Random Access Memories (F-RAMs), claimed to be the industry’s highest density, have been introduced by Cypress Semiconductor. The 4Mb serial F-RAMs feature a 40Mhz SPI, a 2.0-3.6V operating voltage range and are available in industry-standard, RoHS-compliant package options. All F-RAMs provide 100tn read/write cycle endurance with 10-year data retention at 85°C and 151 years at 65°C.
Cypress F-RAMs are suitable solutions for applications requiring continuous and frequent high-speed reading and writing of data with absolute data security. The 4Mb serial F-RAM family addresses mission-critical applications such as industrial controls and automation, industrial metering, multifunction printers, test and measurement equipment and medical wearables.
“Mission-critical systems require high-performance memories that can capture data instantly and reliably on power loss,” said Rainer Hoehler, Vice President, Nonvolatile Products Business Unit, Cypress. “Cypress’s 4Mb F-RAM family delivers absolute data security with the industry’s highest-density serial F-RAM devices.”
The 4Mb serial F-RAMs are sampling today in industry-standard 8EIAJ and 8TDFN packages, with production expected in the fourth quarter of 2015.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
| SKU: | |
|---|---|
| Stock: | 3490 |
| Cost: | $3.95 |
