Micron Launches New Product Category of Low-Standby-Power DDR3Lm With 2Gb and 4Gb Products, Ideal for Ultrathin and Tablet Markets

9th February 2012
News Release from: Micron Technology, Inc
Written by : ES Admin
Micron Technology, Inc. is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets. These 2-gigabit (Gb) and 4Gb DDR3Lm solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.
The first 2Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4Gb DDR3Lm product delivers the same optimized power efficiency as the 2Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2Gb and 4Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.



Power reduction is becoming ever more critical in the fast growing ultrathin markets. Micron's expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies, said Robert Feurle, vice president for Micron's DRAM marketing. The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise.



As computing becomes more and more mobile, longer battery life is increasingly valuable to end users, said Geof Findley, Intel's senior memory enabling manager. The reduced standby power consumption of low-power memory is a move in the right direction.

Sampling of Micron's new DDR3Lm low-power product line begins now, with volume production on 30nm class devices expected to begin in 2Q'12.

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