CMOS DDR SDRAMs feature fast clock rates of 200MHz & 166MHz

7th April 2015

Siobhan O'Gorman

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A line of high-speed CMOS DDR SDRAMs, which provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications and telecomms products, has been introduced by Alliance Memory. The line of devices consists of the AS4C32M8D1, a 256Mb DDR SDRAM, the AS4C64M8D1 a 512Mb DDR SDRAM and the AS4C64M16D1, a 1Gb DDR SDRAM. The devices are available in a 60-ball 8x13x1.2mm TFBGA package or a 66-pin TSOP II package with a 0.65mm pin pitch.

The AS4C32M8D1, AS4C64M8D1 and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs feature a synchronous interface, operate from a single 2.5V (±0.2V) power supply and are lead (Pb)- and halogen-free.

The devices feature fast clock rates of 200MHz and 166MHz and are offered in commercial (0 to +70°C) and industrial (-40 to +85°C) temperature ranges. The DDR SDRAMs offer programmable read or write burst lengths of two, four or eight. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximise performance.

For customers, the devices eliminate costly redesigns by providing long-term support for EOL components. In addition, the company does not perform die shrinks, which frees up engineering resources.