Alliance Memory - New Line of High-Speed CMOS Synchronous DRAMs

Posted By : ES Admin
Alliance Memory - New Line of High-Speed CMOS Synchronous DRAMs
Alliance Memory, Inc., a worldwide provider of legacy memory ICs for the communications, computing, industrial, and consumer markets, today introduced a full line of new, high-speed CMOS synchronous DRAMs (SDR) with densities of 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S), and 256 Mb (AS4C16M16S).
The devices released today are optimized for industrial, communications, medical, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply, and are lead (Pb) and halogen free.

Packaged in a 54-pin, 400-mil plastic TSOP II, the new SDRs offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates from 143 MHz to 200 MHz.

Alliance Memory's SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

As other suppliers are exiting the DRAM market to focus on new technologies, we remain committed to offering legacy parts to their customers, eliminating the need for costly redesigns of their end products, said Dan Gilbert, vice president of sales at Alliance Memory. For these customers, it is imperative to have access to cost-effective drop-in replacement memory that is pin-for-pin compatible, and that is exactly what our new line of SDRs provides.

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