Memory

Displaying 531 - 540 of 540

Flash-based NAND Controller Delivers Optimized Performance for Multi-Level Cell Applications

Flash-based NAND Controller Delivers Optimized Performance for Multi-Level Cell Applications
SST has announced a new flash-based NAND Controller that provides optimized performance for multi-level cell (MLC) NAND flash devices. The SST55LD019M is ideal for use in space-constrained consumer applications where NAND flash is replacing traditional hard disk drives. The SST55LD019M NAND Controller is tailored to support high-volume applications and is offered in the industry's smallest package.
28th August 2006

Cost-Saving Address-Data Multiplexed NOR Flash Memory Solutions for Mobile Applications

Cost-Saving Address-Data Multiplexed NOR Flash Memory Solutions for Mobile Applications
STMicroelectronics applications has announced a new family of Address-Data Multiplexed Input/Output devices – a complete range of NOR Flash memory solutions tailored specifically for cost-efficient, value-sensitive mobile platforms.
12th July 2006

High-Reliability Serial Flash Memory Devices Designed Specifically for the Automotive Market

High-Reliability Serial Flash Memory Devices Designed Specifically for the Automotive Market
STMicroelectronics has announced a new generation of its serial Flash memory chips, with densities from 1 to 4 Mbit, which are intended specifically for demanding automotive applications with high reliability requirements. The new M25P10-A, M25P20 and M25P40 (1 Mbit, 2 Mbit and 4 Mbit, respectively) – are thought to be the first serial Flash devices tough enough to be specified and made available for the automotive environment.
18th June 2006


ST announces 1, 2 and 4-Mbit Serial Flash memories for the Automotive Market

STMicroelectronics has announced a new generation of its serial Flash memory chips, with densities from 1 to 4 Mbit, which are intended specifically for demanding automotive applications with high reliability requirements.
12th June 2006

Integrated logic and 12Mbit memory chip replaces FPGAs and RAM for video buffering

Integrated logic and 12Mbit memory chip replaces FPGAs and RAM for video buffering
DT Electronics has introduced the Logic Devices LF3312 frame buffer / FIFO. The new device simplifies the design of digital video and data buffering systems by replacing both standard synchronous Random Access Memories (RAM) and Field Programmable Gate Array (FPGA) logic with a single chip. The LF3312 is the most flexible memory device for buffering multiple video formats. It uses both sequential and random access addressing and integrates both high-density 12Mbit memory and advanced addressing control logic.
8th June 2006

2GB miniSD memory card announced by Toshiba

2GB miniSD memory card announced by Toshiba
Toshiba Electronics Europe (TEE) has announced an expanded line-up of large capacity miniSD memory cards with the introduction of a 2GB capacity card. The new Toshiba-branded miniSD card will be available from mid-June 2006.
24th May 2006

Ramtron's FRAM technology will make auto airbags smart

Ramtron's FRAM technology will make auto airbags smart
Ramtron International has announced that Hyundai Autonet of Korea has selected its non-volatile FRAM memory technology for smart airbags and occupant sensors in Hyundai automobiles among others. FRAM’s unparalleled write endurance along with its fast data collection capability makes it an ideal non-volatile memory technology for today’s sophisticated airbag systems.
24th May 2006

Storage peripheral solution for portable consumer products

QuickLogic Europe announces that its low-power QuickIDE bus-to-bus bridging IC interoperates with Hitachi Global Storage Technologies' one-inch Microdrive hard drive, delivering a complete mass storage peripheral solution for portable consumer products based on Intel embedded processors.
28th April 2006

ISi Announces Silicon Validation of Z-RAM Technology

Innovative Silicon Inc. (ISi), the developer of Z-RAM™ high density memory IP, has announced that it has achieved silicon validation of Z-RAM memory arrays on 90nm SOI process technologies. The company also announced that it has validated its memory bitcell (which requires only one transistor and zero capacitors) in an additional 10 fabrication processes that include 130nm SOI, 90nm SOI, and FinFET technologies. The company expects to demonstrate working silicon in multiple 65nm processes later this quarter.
23rd January 2006

Zero capacitor memory technology proved realisable on FinFET/TriGate device geometries

In a paper given by Innovative Silicon Inc. (ISi) at the recent IEEE SOI Conference, the company claims to prove the manufacturability of its Z-RAM (zero capacitor) embedded memory technology in FinFET and TriGate devices with geometries below 45nm.
19th January 2006


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