Memory

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Carbon-based memory to speed up computing

Carbon-based memory to speed up computing
Carbon-based memory materials promise to revolutionise how data is stored and to take computing to a new age in terms of speed, efficiency and power. Improved data storage represents the backbone of the knowledge economy, as well as modern industry, business and multimedia. Creating non-volatile data storage can be accomplished through new carbon-based memory materials, which was the aim of the EU-funded CARERAMM (Carbon resistive random access memory materials) project.
18th January 2017

Acquisition promises an increased chip offering

Acquisition promises an increased chip offering
In April 2016, Microchip completed the acquisition of Atmel Corporation. At electronica, Electronic Specifier Editor Joe Bush caught up with Lucio Di Jasio, Microchip’s European Business Development Manager, to get an update on what the company has been doing since.
13th January 2017

Macronix memory incorporated in reference design

Macronix International announced that the NAND MCP memory solution has been adopted and incorporated by Qualcomm Technologies, a subsidiary of Qualcomm Incorporated as a part of the reference design for a Qualcomm Technologies’ LTE Cat. M1/NB-1 chipset, the MDM9206 modem. Macronix’s industry-standard multichip packages (MCPs) combine RAM and Flash memories into one package, satisfying the demands of today’s consumers on their mobile and connected devices.
13th January 2017


Products integrate NAND chips to manage basic control functions

Products integrate NAND chips to manage basic control functions
  The launch of JEDEC e∙MMC Version 5.1 compliant embedded NAND flash memory products has been announced by Toshiba Corporation’s Storage and Electronic Devices Solutions Company, with an enhanced operational temperature range of -40 to 105°C.
10th January 2017

Memory market set to grow strongly over the next 5 years

Memory market set to grow strongly over the next 5 years
According to IC Insights’ 2017 McClean Report, sales of memory ICs are expected to show the strongest growth rate among major integrated circuit market categories during the next five years. 
9th January 2017

Memory technology uses electric current to read and write data

Memory technology uses electric current to read and write data
Today's computers often use as many as four different kinds of memory technology, from the hard drive to the memory chips, each with its own strengths and weaknesses. A new memory technology may be poised to disrupt this landscape, however, with a unique combination of features. It goes by the unwieldy acronym STT-MRAM, which stands for spin-transfer torque magnetic random access memory.
6th January 2017

Compact bidirectional data memory module

Compact bidirectional data memory module
A compact, bidirectional data memory module for tight mounting spaces is being offered by Balluff. The compact memory module with IP 67 protection is just 34x16x8mm in size and can be used as a memory storage device on interchangeable units such as milling heads on gantry type machining centres.
4th January 2017

Total memory market expected to increase ten percent in 2017

Total memory market expected to increase ten percent in 2017
The 20th anniversary edition of IC Insights' McClean Report will be released in January of next year. The following represents a portion of the memory forecast that will appear in the new report. After increasing by more than 20% in both 2013 and 2014, the memory market fell upon difficult times in 2015. 
21st December 2016

Record tunneling magnetoresistance for p-MTJ device

At the 2016 IEEE International Electron Devices Meeting, in a special poster session on MRAM, imec presented a 8nm p-MTJ device with 100% tunnel magnetoresistance (TMR) and coercive field as high 1,500Oe.
7th December 2016

Memristive devices can mimic synaptic plasticity

Leti researchers have demonstrated that memristive devices are excellent candidates to emulate synaptic plasticity, the capability of synapses to enhance or diminish their connectivity between neurons, which is widely believed to be the cellular basis for learning and memory. The breakthrough was presented at IEDM 2016 in San Francisco in the paper, “Experimental Demonstration of Short and Long Term Synaptic Plasticity Using OxRAM Multi k-bit Arrays for Reliable Detection in Highly Noisy Input Data”.
7th December 2016


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Military Space Situational Awareness 2017
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Security & Counter Terror Expo 2017
3rd May 2017
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PCIM 2017
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Germany Nuremberg