Memory

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Compact bidirectional data memory module

Compact bidirectional data memory module
A compact, bidirectional data memory module for tight mounting spaces is being offered by Balluff. The compact memory module with IP 67 protection is just 34x16x8mm in size and can be used as a memory storage device on interchangeable units such as milling heads on gantry type machining centres.
4th January 2017

Total memory market expected to increase ten percent in 2017

Total memory market expected to increase ten percent in 2017
The 20th anniversary edition of IC Insights' McClean Report will be released in January of next year. The following represents a portion of the memory forecast that will appear in the new report. After increasing by more than 20% in both 2013 and 2014, the memory market fell upon difficult times in 2015. 
21st December 2016

Record tunneling magnetoresistance for p-MTJ device

At the 2016 IEEE International Electron Devices Meeting, in a special poster session on MRAM, imec presented a 8nm p-MTJ device with 100% tunnel magnetoresistance (TMR) and coercive field as high 1,500Oe.
7th December 2016


Memristive devices can mimic synaptic plasticity

Leti researchers have demonstrated that memristive devices are excellent candidates to emulate synaptic plasticity, the capability of synapses to enhance or diminish their connectivity between neurons, which is widely believed to be the cellular basis for learning and memory. The breakthrough was presented at IEDM 2016 in San Francisco in the paper, “Experimental Demonstration of Short and Long Term Synaptic Plasticity Using OxRAM Multi k-bit Arrays for Reliable Detection in Highly Noisy Input Data”.
7th December 2016

In-memory data deduplication technology doubles write speeds

In-memory data deduplication technology doubles write speeds
  The development of a high-speed in-memory data deduplication technology for all-flash arrays has been announced by Fujitsu Laboratories. These are large-scale, high-speed storage systems and use multiple flash devices such as solid-state drives. 
6th December 2016

Memory may be more energy efficient than previously thought

Memory may be more energy efficient than previously thought
Scientists often discover interesting things without completely understanding how they work. That has been the case with an experimental memory technology in which temperature and voltage work together to create the conditions for data storage. But precisely how was unknown. But when a Stanford team found a way to untangle the chip’s energy and heat requirements, their tentative findings revealed a pleasant surprise: The process may be more energy efficient than was previously supposed.
6th December 2016

Perovskite could lead to next-gen data storage

Perovskite could lead to next-gen data storage
EPFL scientists have developed a perovskite material with unique properties that can be used to build next-gen hard drives. As we generate more and more data, we need storage systems, e.g. hard drives, with higher density and efficiency. But this also requires materials whose magnetic properties can be quickly and easily manipulated in order to write and access data on them. EPFL scientists have now developed a perovskite material whose magnetic order can be rapidly changed without disrupting it due to heating.
24th November 2016

Alternative storage concepts for better quantum memories

Alternative storage concepts for better quantum memories
Conventional memories used in today’s computers only differentiate between the bit values 0 and 1. In quantum physics, however, arbitrary superpositions of these two states are possible. Most of the ideas for new quantum technology devices rely on this “Superposition Principle”. One of the main challenges in using such states is that they are usually short-lived. Only for a short period of time can information be read out of quantum memories reliably, after that it is irrecoverable.
23rd November 2016

64-bit memory architecture for real-time operating system

64-bit memory architecture for real-time operating system
Consolidation solutions for multicore PCs from TenAsys have been extended with full access to available system memory and programming language support. Version 6.2 of the INtime real-time operating system enables memory extension technology providing each process access to 4GB of physical memory, regardless of the number of processes and cores used on any given system.
21st November 2016

Low pin-count memory subsystem for IoT markets

Low pin-count memory subsystem for IoT markets
A 12 pin-count bus interface has been introduced by Macronix. This design keeps the high speed, high efficiency features of OctaFlash while using 12 pins, sharing the same data I/O, to enable simplicity in system design and optimises PCB space, resulting in cost savings and enhancing the performance.
15th November 2016


Memory documents


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Mobile World Congress 2017
27th February 2017
Spain Fira Gran Via and Fira Montjuïc
Wearable Technology Show 2017
7th March 2017
United Kingdom ExCel, London
embedded world 2017
14th March 2017
Germany Nürnberg Messe
electronica China 2017
14th March 2017
China Shanghai New International Expo Centre
Southern Manufacturing
21st March 2017
United Kingdom FIVE, Farnborough