Memory

Displaying 1 - 10 of 540

Acquisition promises an increased chip offering

Acquisition promises an increased chip offering
In April 2016, Microchip completed the acquisition of Atmel Corporation. At electronica, Electronic Specifier Editor Joe Bush caught up with Lucio Di Jasio, Microchip’s European Business Development Manager, to get an update on what the company has been doing since.
13th January 2017

Macronix memory incorporated in reference design

Macronix International announced that the NAND MCP memory solution has been adopted and incorporated by Qualcomm Technologies, a subsidiary of Qualcomm Incorporated as a part of the reference design for a Qualcomm Technologies’ LTE Cat. M1/NB-1 chipset, the MDM9206 modem. Macronix’s industry-standard multichip packages (MCPs) combine RAM and Flash memories into one package, satisfying the demands of today’s consumers on their mobile and connected devices.
13th January 2017

Products integrate NAND chips to manage basic control functions

Products integrate NAND chips to manage basic control functions
  The launch of JEDEC e∙MMC Version 5.1 compliant embedded NAND flash memory products has been announced by Toshiba Corporation’s Storage and Electronic Devices Solutions Company, with an enhanced operational temperature range of -40 to 105°C.
10th January 2017


Memory market set to grow strongly over the next 5 years

Memory market set to grow strongly over the next 5 years
According to IC Insights’ 2017 McClean Report, sales of memory ICs are expected to show the strongest growth rate among major integrated circuit market categories during the next five years. 
9th January 2017

Memory technology uses electric current to read and write data

Memory technology uses electric current to read and write data
Today's computers often use as many as four different kinds of memory technology, from the hard drive to the memory chips, each with its own strengths and weaknesses. A new memory technology may be poised to disrupt this landscape, however, with a unique combination of features. It goes by the unwieldy acronym STT-MRAM, which stands for spin-transfer torque magnetic random access memory.
6th January 2017

Compact bidirectional data memory module

Compact bidirectional data memory module
A compact, bidirectional data memory module for tight mounting spaces is offered from Balluff. The compact memory module with IP 67 protection is just 34x16x8mm in size and can be used as a memory storage device on interchangeable units such as milling heads on gantry type machining centres.
4th January 2017

Total memory market expected to increase ten percent in 2017

Total memory market expected to increase ten percent in 2017
The 20th anniversary edition of IC Insights' McClean Report will be released in January of next year. The following represents a portion of the memory forecast that will appear in the new report. After increasing by more than 20% in both 2013 and 2014, the memory market fell upon difficult times in 2015. 
21st December 2016

Record tunneling magnetoresistance for p-MTJ device

At the 2016 IEEE International Electron Devices Meeting, in a special poster session on MRAM, imec presented a 8nm p-MTJ device with 100% tunnel magnetoresistance (TMR) and coercive field as high 1,500Oe.
7th December 2016

Memristive devices can mimic synaptic plasticity

Leti researchers have demonstrated that memristive devices are excellent candidates to emulate synaptic plasticity, the capability of synapses to enhance or diminish their connectivity between neurons, which is widely believed to be the cellular basis for learning and memory. The breakthrough was presented at IEDM 2016 in San Francisco in the paper, “Experimental Demonstration of Short and Long Term Synaptic Plasticity Using OxRAM Multi k-bit Arrays for Reliable Detection in Highly Noisy Input Data”.
7th December 2016

In-memory data deduplication technology doubles write speeds

In-memory data deduplication technology doubles write speeds
  The development of a high-speed in-memory data deduplication technology for all-flash arrays has been announced by Fujitsu Laboratories. These are large-scale, high-speed storage systems and use multiple flash devices such as solid-state drives. 
6th December 2016


Memory documents


Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

Mobile World Congress 2017
27th February 2017
Spain Fira Gran Via and Fira Montjuïc
embedded world 2017
14th March 2017
Germany Nürnberg Messe
electronica China 2017
14th March 2017
China Shanghai New International Expo Centre