MACOM to exhibit at IMS 2016

10th May 2016

Jordan Mulcare

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MACOM Technology Solutions will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, California, May 24 - 26^th. MACOM’s booth will feature product solutions optimised for commercial, industrial, scientific and medical RF applications.

Visit Booth 939 to meet with MACOM experts and learn more about:

Basestation: Cutting-edge MACOM GaN 60 W average Power Doherty module live demo with Xilinx DPD
RF Energy: Groundbreaking MACOM GaN that will disruptive RF energy applications
E-Band wideband millimeter-wave Solutions: MACOM’s new E-Band TX and RX SMD Modules and portfolio of wideband millimeter-wave products for addressing the emerging 5G access and backhaul markets
PIN Diode 120 W SMT T/R Switch: A high power, broadband transmit-receive switch demonstrating low TX IL, low RX IL, high RX isolation, small physical size, plastic SMT package across DC - 1 GHz for MILCOM and Land Mobile applications.
W-Band Power Amplifier MMIC: Power amplifier MMIC covering 80-100GHz with leading gain and power performance
Latest Hi-reliability and component products for mission critical space and aerospace applications

Members of MACOM’s product management, engineering and applications teams will be available at Booth #939 to answer any inquiries or questions. MACOM experts will also be participating in various sessions throughout IMS, including:

Workshop: Code: WME-4

Session: Large Signal Network Analysis: From Instrumentation Architectures to Software Applications for Your RF Design Flow Improvement

Title: Use of Nonlinear Vector Network Analyzer Measurements in the Developmentof GaN on Silicon for BTS Applications

Date: Monday, May 23 2016

Time: 8:00 – 17:00 PT Location: TBD

Code: WMH-2 Session: E-Band Communications: Market, Technology and IC Design Title: Transceivers for Highly Spectral Efficient Multi-Gbps radio links Date: Monday, May 23, 2016 Time: 9:00 AM PT Location: TBD

Technical Session

Session: WE1B-3 Title: Soldered Hot-via E-band and W-Band Power Amplifier MMICs for Millimeter-wave Chip Scale Packaging Date: Wednesday, May 25, 2016 Time: 8:40 AM – 9:00 AM PT Location: Room 304

Microapps

Title: GaN on Silicon Power Amplifier Bias and Decoupling Techniques Date: Wednesday, May 25, 2016 Time: 2:30 PM PT Location: Microapps pavilion show floor

Title: GaN on Si Thermal Behavior and Its Impact on PA Performance, Reliability and Cost Date: Thursday, May 26, 2016 Time: 10:35 AM PT Location: Microapps pavilion show floor

Exhibition Hall: Moscone Convention Center Tuesday May 24: 9:00 AM to 5:00 PMWednesday May 25: 9:00 AM to 6:00 PMThursday May 26: 9:00 AM to 3:00 PM