SemiSouth Laboratories, Inc., leader des transistors de puissance en carbure de silicium (SiC) pour conversion et gestion d’énergie à haut rendement en milieu difficile, double l’intensité nominale de ses diodes SiC en boîtier DPAK, qui passe de 5 A à 10 A.

SemiSouth Laboratories, Inc. has doubled the current rating of its DPAK-packaged silicon carbide diodes from 5A to 10A. The 1200V/10A SDB10S120 features a positive temperature coefficient for ease of paralleling, and temperature-independent switching behavior. Maximum operating temperature is 175degC.

SemiSouth Laboratories, Inc. is pleased to announce its 30th US patent granted by the US Patent and Trademark Office. US Patent 8,169,022 was issued on May 1, 2012, and is entitled “Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making.” It was co-invented by Dr. Michael Mazzola, a co-founder of SemiSouth in 2000 when the company spun off of Mississippi State University.

SemiSouth Laboratories, Inc. today launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses. Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C.

SemiSouth Laboratories, Inc has announced that silicon carbide JFETs made by the company are being used in small 0.5 litre inverters to achieve an output power density of 30kWh/l. If inverters of this size and capacity are used with PV panels, one inverter could supply enough electricity for up to five households, it is claimed.

SemiSouth Laboratories, Inc introduit la carte SGDR2500P2, à fonction de commande de grille à deux étages et offrant deux sorties opto-isolées, à utiliser avec les modules d’alimentation incorporant les transistors VJFET (à effet de champ à jonction à tranchée verticale) de SemiSouth comme principaux commutateurs. La SGDR2500P2 fournit des sorties côté haut et côté bas isolées électriquement, de courant crête +20/-10 A, autorisa...

SemiSouth Laboratories, Inc. has announced the SGDR2500P2, a dual-output, two-stage, opto-isolated gate driver board intended for use with power electronics modules that incorporate SemiSouth’s vertical-trench junction field-effect transistors (VJFETs) as the primary switches. The board provides electrically isolated high-side and low-side outputs with peak current levels of +20/-10 A, enabling fast switching speeds and yielding record-low swit...

SemiSouth Laboratories, Inc., fabricant majeur de transistors en carbure de silicium (SiC) pour conversion et gestion d’énergie à forte puissance et haut rendement en milieu difficile, lance de nouvelles diodes 1200 V / 5 A en boîtier compact DPAK (TO-252) pour montage en surface, qui apporte la distance de sécurité nécessaire et n’exige pas de broche centrale.

SemiSouth Laboratories, Inc., has launched new 1200V/5A diodes in the true, compact DPAK (TO-252) surface mount packaging which provides the necessary creepage distance and does not require a center pin.

SemiSouth Laboratories, le fabricant leader de transistors en carbure de silicium (SiC) pour les applications de gestion et de conversion d’énergie à haute puissance et rendement élevé, a lancé une nouvelle famille de JFET SiC économiques présentant une très bonne linéarité qui sont destinés à des applications audio de haut de gamme.

SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched a new family of low cost SiC JFETS with very good linearity targeted at high-end audio applications.

SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced that its diodes and JFETs have been selected by Vincotech, a leading manufacturer of electronic power modules.

SemiSouth Laboratories today launched its SDP60S120D 1200V, 60A SiC power Schottky diode, which delivers the highest continuous forward current (IF ) of any SiC diode in the world (measured @ Tc of 145degC).

A 45 mΩ et 1200 V, ce JFET normalement fermé en carbure de silicium offre une commutation extrêmement rapide ; sans courant de queue, les pertes de commutation sont de quatre à dix fois plus basses que les commutateurs 1200 V concurrents

SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched a new class of record-low, 45 milliohm, 1200 V, normally on trench SiC power JFETs.

SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced new members will be joining its executive team as it prepares for a period of rapid growth following significant investment by Power Integrations (Nasdaq: POWI), the leading supplier of high-voltage analog integrated circuits used in power conversi...

SemiSouth Laboratories Inc has announced that it is now shipping its latest range of vertical trench JFETs – including the world’s first normally-off family of devices to handle up to 50kW – in commercial volume quantities. The company is rapidly expanding production capacity at its state-of-the-art SiC wafer fabrication facility in Starkville, MS, (USA). A completely independent, vertically integrated SiC manufacturer with the most advance...

SemiSouth Laboratories, Inc., fabricant leader de dispositifs en carbure de silicium (SiC) pour applications de conversion et gestion d’énergie à forte puissance et haut rendement en environnement difficile, annonce ce jour un design de référence et une note d’application décrivant un circuit de commande de grille optimisé pour une commutation matérielle haute vitesse de puces SiC JFET de la société, à tranchée verticale de type no...

SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) products for high-power, high-efficiency, harsh-environment power management and conversion applications, today announced a reference design and applications note which describes a gate driver optimized for high speed, hard switching of the company’s normally-off SiC vertical JFETs. The design enables very fast turn-on and turn-off in Isolated Bridge topologies and ...

SemiSouth Laboratories, Inc., fabricant leader de dispositifs en carbure de silicium (SiC) pour applications de conversion et gestion d’énergie à forte puissance et haut rendement en environnement difficile, introduit une gamme étendue de diodes Schottky de puissance ; cette gamme inclut notamment la diode SDP30S120 de courant nominal de 30 A, qui est le dispositif 1200 V en boîtier TO-247 de plus fort courant de l’industrie.