Companies

Central Semiconductor Corp.

Central Semiconductor Corp. Articles

Displaying 1 - 10 of 10
Power
5th January 2024
New 650V Super Junction N-Channel MOSFETs

Central Semiconductor announces the introduction of several new 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications.

Power
7th September 2023
HyperFast rectifiers, ideal for use with Super Junction MOSFETs

Central Semiconductor announced the addition of two new products to its lineup, the CRU24715-600 (600V, with dual common cathode 15A rectifiers) and CRU24730-600 (600V, with dual common cathode 30A rectifiers).

Power
13th October 2021
Zero temperature coefficient current limiting diodes

Central Semiconductor a manufacturer of innovative discrete semiconductor solutions, introduces its new line of Zero Temperature Coefficient (ZTC) current limiting diodes (CLDs) packaged in the DPAK case.

Power
15th September 2021
New 5G transient voltage suppressors launched

Central Semiconductor, manufacturer of innovative discrete semiconductor solutions, has introduced its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage suppressors (TVS).

Power
31st March 2021
100V low profile schottky rectifiers launched

Central Semiconductor has introduced its latest 100V low profile Schottky rectifiers: the 3A CMDFSHC3- 100 and the 5A CMDFSHC5-100. These energy efficient devices are packaged in the low profile SMC DFN surface mount case, and utilise highly reliable passivated silicon die.

Power
13th October 2020
New 1,000V, 4A bridge rectifier features low profile BR DFN-A package

Manufacturer of innovative discrete semiconductor solutions, Central Semiconductor Corp. has introduced the CBRDFA4-100, a 4.0A, 1000V full wave bridge rectifier with a glass passivated die.

Passives
25th September 2019
Schottky bridge rectifiers in low profile BR DFN package

Central Semiconductor has introduced its newest family of Schottky bridge rectifiers, the CBRDFSH series, available in one to two amp, and 40 to 100V options. Devices are packaged in the low profile BR DFN surface mount case and feature highly desirable energy efficiency. These full wave bridge rectifiers utilise individual glass passivated die to reduce leakage and improve performance and reliability. 

Analysis
7th March 2013
Central Semiconductor launches its newly revised website

Central Semiconductor launches its newly redesigned website at www.centralsemi.com featuring improved user interface and product search capability. The new site includes an extensive parametric search feature designed to assist engineers with selecting the right discretes from Central’s vast product portfolio.

Pending
6th October 2011
20V, 3.2A N-Channel and 20V, 2.3A P-Channel complementary MOSFETs in miniature SOT-23F package

Central Semiconductor Corp. introduces the CMPDM203NH 20V, 3.2A N-Channel and complementary CMPDM202PH 20V, 2.3A P-Channel MOSFETs. These devices, packaged in the industry standard SOT-23F, have low rDS(ON)characteristics of 50mΩ and 88mΩ respectively. In addition, the low gate charge of 0.8nC (N-Channel) and 1.3nC (P-Channel) make these devices the ideal energy efficient solutions for space constrained power management applications req...

Pending
6th October 2011
30V, 100mA Low VF Schottky diodes in ultra miniature TLM2D3D6 package

Central Semiconductor Corp. announces the CTLSH01-30 and CTLSH01-30L Low VF Schottky diodes in the space saving, low profile TLM2D3D6 surface mount package. These new devices have a peak reverse voltage rating of 30V and a maximum forward current rating of 100mA. The CTLSH01-30 has a low forward voltage drop (VF) of 410mV at 10mA and an outstanding low reverse leakage current (IR) of 30nA, while the CTLSH01-30L provides an even lower VF of 300mV....

First Previous Page 1 of 1 Next Last

Product Spotlight

Upcoming Events

View all events
Newsletter
Latest global electronics news
© Copyright 2024 Electronic Specifier