RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of the Company's RF component catalog to include two new high linearity differential IF mixers: the RFMX0015 and RFMX1015. Both new products are optimized for operation across a broad range of end markets, including cellular infrastructure, wireless backhaul and other high-performance wireless systems.
The increasing deployment of 3G and LTE wireless systems is spurring demand for very high linearity (IIP3> 28dBm) down-converters. RFMD's RFMX0015 and RFMX1015 feature an innovative passive GaAs mixer core that delivers high linearity. When combined with the GaAs HBT IF amplifier the combination provides an industry-leading IIP3/DC current figure of merit (29dBm/200mA) for a down-conversion differential IF mixer with 7dB gain and 0dBm LO drive.
The RFMX0015 and RFMX1015 operate in the standard cellular bands between 600 to 1050MHz and 1500 to 2200MHz respectively and support both high and low-side LO injection for IF frequencies up to 300MHz. In addition, the mixers feature an IF bias pin that enables users to reduce the DC current to save power when peak linearity performance is not required.
RFMD will showcase a broad portfolio of industry-leading RF components at the electronica 2010 trade show in Munich, Germany, November 9 through November 12. Product brochures will be available at the RFMD booth (#A4.136), and datasheets can be obtained via RFMD's website at www.rfmd.com or by contacting RFMD at 336-664-1233.