Toshiba Electronics launches new compact, integrated IGBT technology for induction heating

7th November 2011
Posted By : ES Admin
Toshiba Electronics launches new compact, integrated IGBT technology for induction heating
Toshiba Electronics Europe has expanded its family of compact, integrated IGBTs with a high-speed switching device that will simplify the design and reduce the component count in cooking appliances and other induction heating applications. Optimised for voltage resonance inverter switching, the new 1200V N-channel, ‘enhancement mode’ GT40QR21 comprises an IGBT and a reverse recovery freewheeling diode monolithically integrated into a single, compact device.
Maximum current ratings are 40A at 25ºC and 35A at 100ºC and the IGBT can operate with extended junction temperatures of up to 175ºC.

Toshiba’s GT40QR21 is designed for very high speed switching – typical IGBT fall time (tf) and turn-off time (toff) with a collector current of 40A are just 0.2µs and 0.4µs respectively, while typical reverse recovery time (trr) for the freewheeling diode is 0.6µs (IF = 15A). Typical collector-emitter saturation voltage (VCE(sat)) is rated at just 1.9V (IC = 40A).

Supplied in a TO-3P(N), TO247-equivalent package the IGBT has dimensions of 15.5mm x 20.0mm x 4.5mm and a maximum junction-to-case thermal resistance (Rth(j-c)) of 0.65ºC/W.

You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

Mobile World Congress 2017
27th February 2017
Spain Fira Gran Via and Fira Montjuïc
Wearable Technology Show 2017
7th March 2017
United Kingdom ExCel, London
embedded world 2017
14th March 2017
Germany Nürnberg Messe
electronica China 2017
14th March 2017
China Shanghai New International Expo Centre
Southern Manufacturing
21st March 2017
United Kingdom FIVE, Farnborough