New C-Band GaN HEMT Amplifiers for VSAT Applications by Mitsubishi Electric
News Release from:
Mitsubishi Electric Europe B.V.
24 January 2012
Mitsubishi Electric is introducing internally impedance matched GaN HEMT power amplifiers for C-band VSAT stations which transmit in the 5.8-6.7GHz frequency range. The MGFC50G5867 and MGFC47G5867 feature industry leading output power of 100W and 50W respectively. The typical linear power gain (Glp) is 10dB for both devices.
The two new devices have a power added efficiency (PAE) more than 43% and a high voltage operation (VDS=40V. Due to the good linearity of the GaN process the 100W device can achieve 3rd-order Inter Modulation (IM3) of -25dBc at 46dBm output power.
GaN amplifiers have become very popular due to their high breakdown-voltage and power density as well as high electron saturation velocity. Furthermore, their ability to contribute to power saving and downsizing of power transmitter equipment make them very attractive and lower the importance of GaAs amplifiers which have been commonly employed in C-band transmitters in the past.