Renesas, RJK60S5DPK, MOSFET
Renesas Electronics Introduces New High-Voltage Power MOSFET Product with Approximately 52 Percent Lower Loss
News Release from:
Renesas Technology Europe Ltd
12 January 2011
Renesas today announced the availability of a new high-voltage N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) product, the RJK60S5DPK, for power supply units. The new power MOSFET delivers high efficiency and low power consumption for PC servers, communication base stations, and solar power generation systems.
The new RJK60S5DPK power MOSFET is ideal for use in the primary power switching circuit of a power supply unit, which converts alternating current (AC) to direct current (DC). It is the first product in Renesas Electronics’ high-voltage power MOSFET series, which employs a high-precision super junction structure (see Note 1) to achieve a figure of merit (FOM, see Note 2), a key overall performance index for power MOSFET devices. The RJK60S5DPK delivers a performance improvement of approximately 90 percent compared to the company’s existing power MOSFET products.
Recently, demand has grown for improved efficiency in the power supply circuits to reduce energy consumption. There is a particularly strong demand for low power consumption though improved power conversion efficiency in high-output switching power supplies for flat-panel TVs, communication base stations, PC servers, and solar power generation systems. This has spurred demand for power MOSFET products with lower on-resistance (see Note 3). However, there are limits to the improvements that can be achieved using a conventional planar structure. Renesas Electronics therefore made use of its accumulated expertise in power device technology to develop a high-precision super junction structure employing a deep-groove formation process. This has made it possible to produce MOSFET devices with a lower on-resistance per unit of area.
Main features of the new RJK60S5DPK power MOSFET
1) Industry-leading low on-resistance
The new RJK60S5DPK power MOSFET achieves an on-resistance of 150 milliohm (mΩ, standard value at ID = 10 A, VGSS = 10 V), approximately 52 percent lower than that of existing Renesas Electronics power MOSFET products. This reduces the amount of loss that occurs during power conversion.
2) High-speed switching
Renesas Electronics’ new power MOSFET has a drive capacitance (gate charge Qgd, Note 4), which affects the switching speed, of only 6 nC (nanocoulomb, standard value at ID = 10 A, VGSS = 10 V), approximately 80 percent less than that of existing Renesas Electronics products. This makes it possible to boost power conversion efficiency through the use of high-speed switching.
The package of the new RJK60S5DPK power MOSFET is equivalent in size to the TO-3P standard package, and the pin assignments conform to the industry standard. This means it can easily be mounted on switching power supply circuit boards that have been evaluated using conventional planar MOSFET devices.
The products in the high-precision super junction structure power MOSFET series can deliver on-resistance per unit of area approximately 80 percent lower than that of products in the company’s existing planar structure series, so if the on-resistance remains the same the chip area can be decreased. Taking advantage of this, Renesas Electronics plans to release in the future a variety of power device products with smaller package sizes, such as products using the TO-220FL (10 mm × 15 mm) package that provide the same performance as existing products using the TO-3P (15.6 mm × 19.9 mm) package.
In addition, Renesas Electronics has identified flat-panel TVs, communication base stations, and PC servers as products that can benefit from switching power supplies with reduced energy consumption, and the company plans to market a series of new ultra-low on-resistance MOSFET products targeted at such applications. Renesas Electronics intends to expand the scale of its high-voltage power device business by utilizing its technology expertise gained from the new RJK60S5DPK power MOSFET and develop a range of new products tailored to specific applications.
Note 1) Super junction structure:
A structural configuration of power MOSFETs. Unlike a conventional planar structure, it enables lowering of the on-resistance without reducing the voltage tolerance of the device. This means the on-resistance per unit of area can be reduced. (See Note 3 regarding on-resistance.)
Note 2) Figure of merit, or FOM:
An index of power MOSFET performance expressed as a numerical value obtained by multiplying the on-resistance (Ron) by the gate-drain charge capacitance (Qgd).
Note 3) On-resistance (Ron):
The resistance when the power MOSFET is operating. A lower value indicates less conduction loss.
Note 4) Gate-drain charge capacitance (Qgd):
The electric charge needed to make the power MOSFET operate. A lower value indicates faster switching performance.