MicroFET, MOSFET, Fairchild Semiconductor,
Fairchild Semiconductor’s MicroFET MOSFET Shrinks Its Footprint for Portable Designs
News Release from:
Fairchild Semiconductor
10 May 2010
Portable designers continue to look for solutions that offer higher efficiency in smaller and thinner form factors. To meet this need, Fairchild Semiconductor offers a portfolio of high performance MicroFET MOSFETs packaged in an ultra-compact and thin footprint (1.6mm x 1.6mm x 0.55mm).
With an industry-leading product portfolio, designers can select the MicroFET MOSFET that optimally suites their application and design needs. This new portfolio contains a number of commonly used topology choices, including, single P-Channel and Schottky diode combo, single N-Channel and Schottky diode combo, dual P-Channel, dual N-Channel, complementary pair, single N-Channel and single P-Channel.
These MicroFET MOSFETs are designed with Fairchild's advanced-performance PowerTrench® MOSFET process technology. This process technology yields exceptionally low values for RDS (ON), total gate charge (QG) and Miller Charge (QGD) – enhancements that result in superior conduction and switching performance and excellent thermal efficiencies. Their advanced MicroFET packaging delivers excellent power dissipation and conduction loss characteristics compared to conventional MOSFET packaging.
Fairchild Semiconductor offers the industry’s broadest portfolio of 1.6mm x 1.6mm and 2mm x 2mm thermally enhanced ultra-compact, low-profile MicroFET devices. These easy-to-implement, high-performance and space-saving MOSFETs are ideal for portable applications.
