FDPC8011S, Fairchild, Semiconductor, Power clip, MOSFET, DC, embedded
Fairchild Semiconductor’s 3.3x3.3mm2 Power Clip Asymmetric Dual MOSFET Helps Designers Achieve Highest Power Density and Efficiency in Power Supply Designs
News Release from:
Fairchild Semiconductor
09 May 2012
As power requirements increase to provide more functionality in high-density embedded DC-DC power supplies, power engineers are challenged with providing higher power density and efficiency in less board space. Fairchild Semiconductor helps designers meet this system challenge with the introduction of the FDPC8011S, a 25V, 3.3x3.3mm2, low-profile Dual Power Clip Asymmetric N-Channel Module.
Developed to operate at higher switching frequencies, the FDPC8011S consists of a 1.4mΩ SyncFETTM technology and a 5.4mΩ control, low-figure of merit N-Channel MOSFET integrated in an all-clip package, which helps reduce the capacitor count and inductor size in synchronous buck applications. The device’s source down, low–side allows for simple placement and routing, enabling a more compact board layout and achieving optimal thermal performance. The FDPC8011S delivers over 25A output current and has a 2X output current capacity improvement over other conventional 3x3mm2 dual MOSFETs.
Features and Benefits:
•Control N-Channel MOSFET with RDS(ON) = 5.4mΩ Typical, (7.3mΩ Max) at VGS = 4.5V
•Synchronous N-Channel MOSFET with RDS(ON) = 1.4mΩ Typical, (2.1mΩ Max) at VGS = 4.5V
•Low inductance packaging shortens rise/fall times, resulting in lower switching losses
•MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
•RoHS-compliant
This 3.3x3.3mm2 Power Clip Asymmetric Dual MOSFET is part of Fairchild Semiconductor’s comprehensive portfolio of advanced MOSFET technology that provides power designers with a wide range of solutions for mission critical high efficiency information processing designs.
Price: US $1.60 in 1,000 quantity pieces
Availability: Samples available upon request.
Delivery: 8-12 weeks ARO
