Diodes Incorporated, IntelliFET, ZXMS6004DT8
Dual self-protected MOSFETs from Diodes Incorporated provide complete protection and greater thermal efficiency
News Release from:
Diodes Incorporated
29 June 2010
Optimized for use in the harshest electrical environments, dual self-protected low side MOSFETs from Diodes Incorporated provide automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability. With an Rthj-a rating of 95OC/W, these SM8 packaged devices offer a thermal efficiency that is 30% better than that of alternative SO8 packaged devices, ensuring cooler running.
The latest additions to the IntelliFET product line, the space saving 60V rated N-channel ZXMS6004DT8 and ZXMS6005DT8 integrate over-temperature, over-current, over-voltage and input ESD protection on each of their two independent and isolated switching channels. The MOSFETs handle nominal load currents of 1.2A and 1.8A respectively and present on-resistances of only 500m
Two additional single channel devices have also been announced by Diodes, the ZXMS6005DG and ZXMS6005SG, offering the same level of protection as the duals and providing a cost effective alternative to competing single channel self protected MOSFET solutions.
